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SISS67DN-T1-GE3

Power MOSFET, P Channel, 30 V, 60 A, 0.0046 ohm, PowerPAK 1212, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 8Pins
  • Channel Type: P Channel
  • Product Range: TrenchFET Gen III
  • Power Dissipation: 65.8W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: P Channel
  • Power Dissipation Pd: 65.8W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.0046ohm
  • Transistor Case Style: PowerPAK 1212
  • Drain Source Voltage Vds: 30V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 60A
  • Drain Source On State Resistance: 0.0046ohm
  • Gate Source Threshold Voltage Max: 2.5V
Delivery and price
Units per pack 500
Price 0.644 €
Current stock 5950
Lead time 7 days
PDF File icon Datasheet