Illustrative purposes only
SISS66DN-T1-GE3
Power MOSFET, N Channel + Schottky, 30 V, 178.3 A, 0.00115 ohm, PowerPAK 1212, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N Channel + Schottky
- Product Range: TrenchFET
- Power Dissipation: 65.8W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel + Schottky
- Power Dissipation Pd: 65.8W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.00115ohm
- Transistor Case Style: PowerPAK 1212
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 178.3A
- Drain Source On State Resistance: 0.00115ohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.708 € |
| Current stock | 5904 |
| Lead time | 7 days |
Datasheet
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