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SISS12DN-T1-GE3

Power MOSFET, N Channel, 40 V, 60 A, 0.00161 ohm, PowerPAK 1212, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen IV
  • Power Dissipation: 65.7W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 65.7W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.00161ohm
  • Transistor Case Style: PowerPAK 1212
  • Drain Source Voltage Vds: 40V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 60A
  • Drain Source On State Resistance: 0.00161ohm
  • Gate Source Threshold Voltage Max: 2.4V
Delivery and price
Units per pack 5000
Price 0.445 €
Current stock 8019
Lead time 7 days
PDF File icon Datasheet