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This product is RoHS compilant

SIRA20BDP-T1-GE3

Power MOSFET, N Channel, 25 V, 335 A, 0.00048 ohm, PowerPAK SO, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen IV
  • Power Dissipation: 104W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 104W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 480µohm
  • Transistor Case Style: PowerPAK SO
  • Drain Source Voltage Vds: 25V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 335A
  • Drain Source On State Resistance: 480µohm
  • Gate Source Threshold Voltage Max: 2.1V
Delivery and price
Units per pack 5000
Price 0.903 €
Current stock 6000
Lead time 7 days
PDF File icon Datasheet