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SIR582DP-T1-RE3

Power MOSFET, N Channel, 80 V, 116 A, 0.0028 ohm, PowerPAK SO, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen V Series
  • Power Dissipation: 92.5W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 92.5W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.0028ohm
  • Transistor Case Style: PowerPAK SO
  • Drain Source Voltage Vds: 80V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 116A
  • Drain Source On State Resistance: 0.0028ohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 500
Price 0.999 €
Current stock 5631
Lead time 7 days
PDF File icon Datasheet