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SIJH600E-T1-GE3

Power MOSFET, N Channel, 60 V, 373 A, 0.00065 ohm, PowerPAK, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 5Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen IV
  • Power Dissipation: 333W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 333W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 650µohm
  • Transistor Case Style: PowerPAK
  • Drain Source Voltage Vds: 60V
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: 373A
  • Drain Source On State Resistance: 650µohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 50
Price 6.83 €
Current stock 2050
Lead time 7 days
PDF File icon Datasheet