Illustrative purposes only
SIHU4N80AE-GE3
Power MOSFET, N Channel, 800 V, 4.1 A, 1.25 ohm, TO-251, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: E
- Power Dissipation: 62.5W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 62.5W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 1.25ohm
- Transistor Case Style: TO-251
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4.1A
- Drain Source On State Resistance: 1.25ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.549 € |
| Current stock | 2820 |
| Lead time | 7 days |
Datasheet
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