Illustrative purposes only
SIHG22N60E-GE3
Power MOSFET, N Channel, 600 V, 21 A, 0.15 ohm, TO-247AC, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 227W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 227W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.15ohm
- Transistor Case Style: TO-247AC
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21A
- Drain Source On State Resistance: 0.15ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.05 € |
| Current stock | 593 |
| Lead time | 7 days |