Illustrative purposes only
SIHB5N80AE-GE3
Power MOSFET, N Channel, 800 V, 4.4 A, 1.17 ohm, TO-263 (D2PAK), Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: E
- Power Dissipation: 62.5W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 62.5W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 1.17ohm
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4.4A
- Drain Source On State Resistance: 1.17ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.825 € |
| Current stock | 1040 |
| Lead time | 7 days |
Datasheet
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