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SIDR392DP-T1-GE3

Power MOSFET, N Channel, 30 V, 100 A, 470 µohm, PowerPAK SO, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen IV
  • Power Dissipation: 125W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 125W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 470µohm
  • Transistor Case Style: PowerPAK SO
  • Drain Source Voltage Vds: 30V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 100A
  • Drain Source On State Resistance: 470µohm
  • Gate Source Threshold Voltage Max: 2.2V
Delivery and price
Units per pack 1000
Price 1.36 €
Current stock 5590
Lead time 7 days
PDF File icon Datasheet