Illustrative purposes only
SI4288DY-T1-GE3
Dual MOSFET, N Channel, 40 V, 9.2 A, 0.0165 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 3.1W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0165ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 9.2A
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Gate Source Threshold Voltage Max: 1.2V
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 9.2A
- Continuous Drain Current Id P Channel: 9.2A
- Drain Source On State Resistance N Channel: 0.0165ohm
- Drain Source On State Resistance P Channel: 0.0165ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.803 € |
| Current stock | N/A |
| Lead time | 30 days |