Illustrative purposes only
SI4100DY-T1-GE3
Power MOSFET, N Channel, 100 V, 6.8 A, 0.051 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N Channel
- Power Dissipation: 6W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 6W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.051ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 6.8A
- Drain Source On State Resistance: 0.051ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.771 € |
| Current stock | N/A |
| Lead time | 30 days |