Illustrative purposes only
SI2301CDS-T1-GE3
Power MOSFET, P Channel, 20 V, 3.1 A, 0.142 ohm, TO-236, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: P Channel
- Power Dissipation: 860mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 860mW
- Rds(on) Test Voltage: 2.5V
- On Resistance Rds(on): 0.142ohm
- Transistor Case Style: TO-236
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3.1A
- Drain Source On State Resistance: 0.142ohm
- Gate Source Threshold Voltage Max: 400mV
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.146 € |
| Current stock | 117000 |
| Lead time | 7 days |
Datasheet
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