Illustrative purposes only
SI1967DH-T1-GE3
Dual MOSFET, P Channel, 20 V, 1.3 A, 0.64 ohm, SOT-363, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 1.25W
- Rds(on) Test Voltage: 1.8V
- On Resistance Rds(on): 0.64ohm
- Transistor Case Style: SOT-363
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1.3A
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Gate Source Threshold Voltage Max: 400mV
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.3A
- Continuous Drain Current Id P Channel: 1.3A
- Drain Source On State Resistance N Channel: 0.64ohm
- Drain Source On State Resistance P Channel: 0.64ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.216 € |
| Current stock | 9520 |
| Lead time | 7 days |