Illustrative purposes only
SI1922EDH-T1-GE3
Dual MOSFET, N Channel, 20 V, 1.3 A, 0.165 ohm, SOT-363, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- Channel Type: N Channel
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.3A
- Continuous Drain Current Id P Channel: 1.3A
- Drain Source On State Resistance N Channel: 0.165ohm
- Drain Source On State Resistance P Channel: 0.165ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.203 € |
| Current stock | N/A |
| Lead time | 30 days |