Illustrative purposes only
SBC856BDW1T1G
Bipolar Transistor Array, Dual PNP, -65 V, 100 mA, 380 mW, 150 hFE, SOT-363
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 150hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- DC Collector Current: 100mA
- Power Dissipation Pd: 380mW
- Power Dissipation PNP: 380mW
- Transistor Case Style: SOT-363
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min PNP: 150hFE
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max PNP: 65V
- Collector Emitter Voltage V(br)ceo: -65V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.111 € |
| Current stock | 34 |
| Lead time | 7 days |