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NVMYS1D3N04CTWG

Power MOSFET, N Channel, 40 V, 252 A, 960 µohm, LFPAK, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 4Pins
  • Channel Type: N Channel
  • Qualification: AEC-Q101
  • Power Dissipation: 134W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 134W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 960µohm
  • Transistor Case Style: LFPAK
  • Drain Source Voltage Vds: 40V
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: 252A
  • Drain Source On State Resistance: 960µohm
  • Automotive Qualification Standard: AEC-Q101
  • Gate Source Threshold Voltage Max: 3.5V
Delivery and price
Units per pack 9000
Price 1.96 €
Current stock 5272
Lead time 7 days
PDF File icon Datasheet