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NVJD5121NT1G

Dual MOSFET, N Channel, 60 V, 295 mA, 1 ohm, SOT-363, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • Channel Type: N Channel
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 250mW
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 1ohm
  • Transistor Case Style: SOT-363
  • Drain Source Voltage Vds: 60V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 295mA
  • Power Dissipation N Channel: 250mW
  • Power Dissipation P Channel: 250mW
  • Gate Source Threshold Voltage Max: 1.7V
  • Drain Source Voltage Vds N Channel: 60V
  • Drain Source Voltage Vds P Channel: 60V
  • Continuous Drain Current Id N Channel: 295mA
  • Continuous Drain Current Id P Channel: 295mA
  • Drain Source On State Resistance N Channel: 1ohm
  • Drain Source On State Resistance P Channel: 1ohm
Delivery and price
Units per pack 500
Price 0.109 €
Current stock 11800
Lead time 7 days