Illustrative purposes only
NVJD4401NT1G
Dual MOSFET, N Channel, 20 V, 630 mA, 0.29 ohm, SOT-363, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 550mW
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.29ohm
- Transistor Case Style: SOT-363
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 630mA
- Power Dissipation N Channel: 550mW
- Power Dissipation P Channel: 550mW
- Gate Source Threshold Voltage Max: 920mV
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 630mA
- Continuous Drain Current Id P Channel: 630mA
- Drain Source On State Resistance N Channel: 0.29ohm
- Drain Source On State Resistance P Channel: 0.29ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.269 € |
| Current stock | 3360 |
| Lead time | 7 days |
Datasheet
|
|---|