Illustrative purposes only
NST30010MXV6T1G
Bipolar Transistor Array, Dual PNP, -30 V, -100 mA, 661 mW, 420 hFE, SOT-563
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 420hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- DC Collector Current: -100mA
- Power Dissipation Pd: 661mW
- Power Dissipation PNP: 661mW
- Transistor Case Style: SOT-563
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min PNP: 420hFE
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max PNP: 30V
- Collector Emitter Voltage V(br)ceo: -30V
| Delivery and price | |
|---|---|
| Units per pack | 4000 |
| Price | 0.276 € |
| Current stock | N/A |
| Lead time | 30 days |