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MMBTA92LT1G
TRANSISTOR, RF BIPOLAR
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Cas
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: MMBTxxxx
- Qualification: AEC-Q101
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 50MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 50hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 300V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.039 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 14, 2026