Illustrative purposes only
MJB41CT4G
Bipolar Transistor Array, NPN, 100 V, 6 A, 65 W, 15 hFE, TO-263 (D2PAK)
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- DC Current Gain hFE: 15hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- DC Collector Current: 6A
- Power Dissipation Pd: 65W
- Power Dissipation NPN: 65W
- Transistor Case Style: TO-263 (D2PAK)
- Transition Frequency NPN: 3MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 15hFE
- Continuous Collector Current NPN: 6A
- Collector Emitter Voltage Max NPN: 100V
- Collector Emitter Voltage V(br)ceo: 100V
| Delivery and price | |
|---|---|
| Units per pack | 2400 |
| Price | 0.634 € |
| Current stock | 1468 |
| Lead time | 7 days |