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FQB8P10TM

Power MOSFET, P Channel, 100 V, 8 A, 0.41 ohm, TO-263 (D2PAK), Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: P Channel
  • Product Range: QFET
  • Power Dissipation: 65W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: P Channel
  • Power Dissipation Pd: 65W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.41ohm
  • Transistor Case Style: TO-263 (D2PAK)
  • Drain Source Voltage Vds: 100V
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: 8A
  • Drain Source On State Resistance: 0.41ohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 2400
Price 0.515 €
Current stock 1401
Lead time 7 days
PDF File icon Datasheet