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FQB55N10TM

Power MOSFET, N Channel, 100 V, 55 A, 0.021 ohm, TO-263AB, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Power Dissipation: 155W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 155W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.021ohm
  • Transistor Case Style: TO-263AB
  • Drain Source Voltage Vds: 100V
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: 55A
  • Drain Source On State Resistance: 0.021ohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 800
Price 1.31 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet