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FQB19N20LTM

Power MOSFET, N Channel, 200 V, 21 A, 0.11 ohm, TO-263AB, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 2Pins
  • Channel Type: N Channel
  • Power Dissipation: 3.13W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 3.13W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.11ohm
  • Transistor Case Style: TO-263AB
  • Drain Source Voltage Vds: 200V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 21A
  • Drain Source On State Resistance: 0.11ohm
  • Gate Source Threshold Voltage Max: 2V
Delivery and price
Units per pack 500
Price 1.34 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet