Illustrative purposes only
FDS8958B
Dual MOSFET, Complementary N and P Channel, 30 V, 6.4 A, 0.021 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 2W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.021ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 6.4A
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Gate Source Threshold Voltage Max: 2V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6.4A
- Continuous Drain Current Id P Channel: 6.4A
- Drain Source On State Resistance N Channel: 0.021ohm
- Drain Source On State Resistance P Channel: 0.021ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.439 € |
| Current stock | 2410 |
| Lead time | 7 days |