Illustrative purposes only
FDI038AN06A0
Power MOSFET, N Channel, 60 V, 80 A, 0.0035 ohm, I2PAK, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Power Trench
- Power Dissipation: 310W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 310W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0035ohm
- Transistor Case Style: I2PAK
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 80A
- Drain Source On State Resistance: 0.0035ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 800 |
| Price | 2.72 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
|
|---|