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FDG6322C
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SC-70
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 300mW
- Power Dissipation P Channel: 300mW
- Drain Source Voltage Vds N Channel: 25V
- Drain Source Voltage Vds P Channel: 25V
- Continuous Drain Current Id N Channel: 220mA
- Continuous Drain Current Id P Channel: 220mA
- Drain Source On State Resistance N Channel: 2.6ohm
- Drain Source On State Resistance P Channel: 2.6ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.105 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 22, 2026