Illustrative purposes only
FDC6561AN
Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm, SuperSOT, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 960mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.082ohm
- Transistor Case Style: SuperSOT
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.5A
- Power Dissipation N Channel: 960mW
- Gate Source Threshold Voltage Max: 1.8V
- Drain Source Voltage Vds N Channel: 30V
- Continuous Drain Current Id N Channel: 2.5A
- Drain Source On State Resistance N Channel: 0.082ohm
| Delivery and price | |
|---|---|
| Units per pack | 45000 |
| Price | 0.22 € |
| Current stock | 15000 |
| Lead time | 7 days |