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FDC6321C

Dual MOSFET, Complementary N and P Channel, 25 V, 460 mA, 0.33 ohm, SuperSOT, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • Channel Type: Complementary N and P Channel
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary N and P Channel
  • Power Dissipation Pd: 900mW
  • Rds(on) Test Voltage: 4.5V
  • On Resistance Rds(on): 0.33ohm
  • Transistor Case Style: SuperSOT
  • Drain Source Voltage Vds: 25V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 460mA
  • Power Dissipation N Channel: 900mW
  • Power Dissipation P Channel: 900mW
  • Gate Source Threshold Voltage Max: 800mV
  • Drain Source Voltage Vds N Channel: 25V
  • Drain Source Voltage Vds P Channel: 25V
  • Continuous Drain Current Id N Channel: 460mA
  • Continuous Drain Current Id P Channel: 460mA
  • Drain Source On State Resistance N Channel: 0.33ohm
  • Drain Source On State Resistance P Channel: 0.33ohm
Delivery and price
Units per pack 500
Price 0.324 €
Current stock 40311
Lead time 7 days