Illustrative purposes only
BCM857QASZ
Bipolar Transistor Array, Dual PNP, -45 V, -100 mA, 350 mW, 0.95 hFE, DFN1010B
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 0.95hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- DC Collector Current: -100mA
- Power Dissipation Pd: 350mW
- Power Dissipation PNP: 350mW
- Transistor Case Style: DFN1010B
- Transition Frequency PNP: 175MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max PNP: 45V
- Collector Emitter Voltage V(br)ceo: -45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.114 € |
| Current stock | 6480 |
| Lead time | 7 days |
Datasheet
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