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This product is RoHS compilant

BCM856DS,115

Bipolar Transistor Array, Dual PNP, -65 V, -100 mA, 380 mW, 290 hFE, SOT-457

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 290hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual PNP
  • DC Collector Current: -100mA
  • Power Dissipation Pd: 380mW
  • Power Dissipation PNP: 380mW
  • Transistor Case Style: SOT-457
  • Transition Frequency PNP: 175MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min PNP: 290hFE
  • Continuous Collector Current PNP: 100mA
  • Collector Emitter Voltage Max PNP: 65V
  • Collector Emitter Voltage V(br)ceo: -65V
Delivery and price
Units per pack 500
Price 0.163 €
Current stock 317
Lead time 7 days