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This product is RoHS compilant

BC857BV,115

Bipolar Transistor Array, Dual PNP, -45 V, -100 mA, 200 mW, 200 hFE, SOT-666

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 200hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual PNP
  • DC Collector Current: -100mA
  • Power Dissipation Pd: 200mW
  • Power Dissipation PNP: 200mW
  • Transistor Case Style: SOT-666
  • Transition Frequency PNP: 100MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min PNP: 200hFE
  • Continuous Collector Current PNP: 100mA
  • Collector Emitter Voltage Max PNP: 45V
  • Collector Emitter Voltage V(br)ceo: -45V
Delivery and price
Units per pack 500
Price 0.139 €
Current stock 3880
Lead time 7 days
PDF File icon Datasheet