Illustrative purposes only
BC856S,115
Bipolar Transistor Array, Dual PNP, -65 V, -100 mA, 220 mW, 110 hFE, SOT-363
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NEXPERIA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 110hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- DC Collector Current: -100mA
- Power Dissipation Pd: 220mW
- Power Dissipation PNP: 220mW
- Transistor Case Style: SOT-363
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min PNP: 110hFE
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max PNP: 65V
- Collector Emitter Voltage V(br)ceo: -65V
Delivery and price | |
---|---|
Units per pack | 3000 |
Price | 0.049 € |
Current stock | N/A |
Lead time | 30 days |