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BC846BDW1T1G
TRANSISTOR, NPN, 65V, 100MA, SOT-363-6
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: BCxxx Series
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: 380mW
- Power Dissipation PNP: -
- Transistor Case Style: SOT-363
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 100mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 65V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.025 € |
| Current stock | 72855 |
| Lead time | 7 days |
Datasheet
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Updated at March 1, 2026