# Bipolar (BJT) Single Transistor, PNP, 25 V, 3 A, 725 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943454/)

**URL**: https://novapart.co/products/ZXTP749FTA/bipolar-bjt-single-transistor-pnp-25-v-3-a-725-mw
**SKU**: ZXTP749FTA
**Manufacturer**: DIODES INC.
**Price**: €0.0830
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 725mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 25hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943454/)

**ZXTP749F** 

## **25V PNP LOW SATURATION TRANSISTOR IN SOT23** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -25V 

- BVCEO > -35V forward blocking voltage 

- IC = -3A Continuous Collector Current 

- Low Saturation Voltage, VCE(SAT) < -150mV @ -1A. 

- RCE(sat) = 87mΩ for a low equivalent on-resistance 

- 725mW power dissipation 

- hFE characterised up to -6A for high current gain hold-up 

- Complementary NPN Type: ZXTN649F 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound 

   - UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads 

   - Solderable per MIL-STD-202, Method 208 

   - Weight 0.008 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Application** 

- MOSFET Gate Drivers 

- Power Switching in Automotive and Industrial Applications 

- Motor Drive and Control 

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SOT23<br>Top View<br>**----- End of picture text -----**<br>


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E<br>C<br>C<br>B<br>B<br>E<br>Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|ZXTP749FTA|1N8|7|8|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" 

and Lead-free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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1N8 717 1N8 = Product Type Marking Code<br>**----- End of picture text -----**<br>


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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

January 2016 © Diodes Incorporated 

**ZXTP749F** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|-35|V|
|Collector-Emitter Voltage|VCEO|-25|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-3|A|
|Peak Pulse Current|ICM|-6|A|
|Base Current|IB|-500|mA|
|Peak Pulse Current|IBM|-2|A|

**----- End of picture text -----**<br>


## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation (Note 5)|PD|725|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|172|°C/W|
|Thermal Resistance, Junction to Leads (Note 6)|RθJL|79|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

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## **ESD Ratings** (Note 7) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|JEDEC Class|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|

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Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1 oz. copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Thermal resistance from junction to solder-point (at the end of the collector lead). 

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

January 2016 © Diodes Incorporated 

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**----- Start of picture text -----**<br>
ZXTP749F<br>[ace ab Ok AY ee [<br>Thermal Characteristics and Derating information<br>0.8<br>V<br>10 CE(sat)<br>Limited<br>eer aay re TTT<br>a eiNEE, a Seens i ‘ee 0.6 Py | NETIN  ETE<br>1<br>DC 0.4<br>—ma 1s CooeTSACS ae CTOaN i= NX \<br>100m 100ms<br>| | | 10ms J OAKS 0.2 PT TTT TTNT<br>Single Pulse 1ms<br>T =25°C tySENSE PLT [LETTE] EL ENE<br>amb 100µs<br>10m te tTRin 0.0 PET ET TT EE ENNr \<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>180<br>T =25°C<br>160 amb LM TM Tn Single Pulse Tl<br>140120 CT aAail 100 SSeii,ETTscestiimeettd EIN LT UT Tamb=25°C l|<br>Pa ett een em meat<br>100 D=0.5<br>ST Za " CONCCO CI CT nT<br>80 seer omnimemDS”y YigeMUNN 10 PTALUMISeLTCNE ELIMIESTECUTANene TPITCUTetLUTTUTTa1LU<br>60 rai Uf — C—O oo<br>40 All D=0.2 Single Pulse HII Ef<br>re —“y- | D=0.05 CO TH CTS Co<br>200 mn S oarr Ss iil el D=0.1 wTAIA ETI 1 PETITSeshTVmeesterCEM LATATTSeee<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

**Pulse Power Dissipation** 

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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

January 2016 © Diodes Incorporated 

**ZXTP749F** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|a|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|Collector-Base Breakdown Voltage|BVCBO|-35|-60|-|V|IC = -100µA|
|p|o|GO|(OR (|
|Collector-Emitter Breakdown Voltage (Note 8)|BVCEO|f|-25|-40|-|V|IC = -10mA|
|pf|Emitter-Base Breakdown Voltage|BVEBO|-7|-8.4|-|V|IE|= -100µA|
|-50|nA|VCB = -28V|
|a|Collector Cutoff Current|ICBO|-|<1|-0.5|µA|VCB = -28V, TA = +100°C|
|pf|Emitter Cutoff Current|IEBO|-|<1|-50|nA|VEB  = -5.6V|
|200|320|500|IC = -100mA, VCE = -2V|
|130|230|-|IC = -1A, VCE = -2V|
|Static Forward Current Transfer Ratio (Note 8)|hFE|100|180|-|-|IC = -2A, VCE = -2V|
|25|50|-|IC = -6A, VCE = -2V|
|-|-85|-150|IC = -1A, IB = -100mA|
|a|Collector-Emitter Saturation Voltage (Note 8)|OO|VCE(sat)|-|-229|-350|mV|IC = -3A, IB = -300mA|
|pf|Base-Emitter Turn-On Voltage (Note 8)|VBE(on)|-|-786|-850|mV|IC|= -1A, VCE = -2V|
|pd|Base-Emitter Saturation Voltage (Note 8)|VBE(sat)|-|-895|-1,000|mV|IC|= -1A, IB = -100mA|

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Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

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**ZXTP749F** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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1<br>Tamb=25°C I /I =10<br>0.3 C B<br>I /I =100<br>Fy C B pe AUT<br>100m —_——— I C /I B =50 ui | Ng (Amelall 1 150°C | }<br>Briiiamaiienns eT<br>0.2<br>100°C<br>10m I /I =10<br>C B 0.1<br>=e eee sae YY 25°C<br>I /I =20<br>C B<br>Saeriieeeesi HH P|<br>-55°C<br>1m | 1 on 0.0 Pdem — aeill1 eal<br>1m 10m 100m 1 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(sat) C CE(sat) C<br>1.2<br>150 ° C V CE =-2V I C /I B =10<br>500 HH HH 1.0 a -55°C Py |<br>=a vi PT 25°C LT TY ||<br>400 CTESSS 3 Han LY<br>100°C<br>0.8<br>HTT SSN eS<br>300<br>SN 25°C 0.6<br>200 FICCILTT LLIN | Eeeaatiie  eatin en 150°C<br>| TA NCI Fete) 1 T mall<br>a ° TNT 0.4 aT eT HII 100°C i Til<br>100 -55 C 1 eT<br>a TMICCCCUNICC SST Sern Aton<br>0 a, 0.2 PTT VTE TU PE<br>1m 10m 100m 1 10 1m 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(sat) C<br>1.2 180<br>V CE =-2V a Sy| 160 tHE EH} 4 f = 1MHz<br>1.0 -55°C 140<br>Felill 25 CU °C eg)ry  y/ = EECHHSEHHEpT ATT Cibo TTE<br>120<br>0.8 ar aN oN i All PA=F eetoe<br>—— 100<br>ni eee /, oT A<br>ermI oe 7 80 EHH<br>0.6 a OrrE NE<br>anit DE Al 60 =o<br>150°C<br>0.4 etree rN! | 40 ST Cobo<br>ptae 100°C HTT 20 See iaimee<br>0.2 eetSei i LHBill 0 EHHPT TT<br>1m 10m 100m 1 10m 100m 1 10<br>- IC   Collector Current (A) - Voltage(V)<br>V  v I Capacitance v Voltage<br>BE(on) C<br>  (V)   (V)<br>CE(sat) CE(sat)<br>- V - V<br>  (V)<br>BE(sat)<br>- V<br>Typical Gain (hFE)<br> (V)<br>BE(on)<br>- V<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

January 2016 © Diodes Incorporated 

**ZXTP749F** 

## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

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All 7°<br>H<br>GAUGE PLANE<br>0.25 SOT23<br>K1 K J Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>a C  2.30  2.50  2.40<br>A tf M A | ee<br>D  0.89  1.03  0.915<br>cu ae L L1 === F  0.45  0.60  0.535<br>e e enn ——— G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>J  0.013 0.10 0.05<br>| en<br>C B K  0.890 1.00 0.975<br>K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>oo ==== L1  0.25  0.55  0.40<br>D M  0.085 0.150 0.110<br>a  0°  8°  --<br>F G<br>Ty =SeE All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

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Y<br>Y1 f C<br>a<br>FIL X X1 a<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**<br>2.0<br>0.8<br>1.35<br>0.9<br>2.9|
|---|---|
|**C**||
|**X**||
|**X1**||
|**Y**||
|**Y1**||



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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

January 2016 © Diodes Incorporated 

## **ZXTP749F** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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ZXTP749F Document Number: DS31901 Rev. 4 - 2 

January 2016 © Diodes Incorporated 



## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtp749fta/trans-pnp-25v-3a-150deg-c-0-725w/dp/3943454)
---

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