# Bipolar (BJT) Single Transistor, PNP, 70 V, 2.5 A, 2.45 W, DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3943453RL/)

**URL**: https://novapart.co/products/ZXTP722MATA/bipolar-bjt-single-transistor-pnp-70-v-25-a-245-w
**SKU**: ZXTP722MATA
**Manufacturer**: DIODES INC.
**Price**: €0.1540
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.45W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 180MHz |
| Transistor Case Style | DFN2020 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2.5A |
| Collector Emitter Voltage Max | 70V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943453RL/)

**A Product Line of Diodes Incorporated** 

**ZXTP722MA** 

**70V PNP LOW SATURATION TRANSISTOR** 

## **Features and Benefits** 

- BVCEO > -70V 

- IC = -2.5A Continuous Collector Current 

- Low Saturation Voltage (-220mV max @ -1A) 

- RSAT = 117 mΩ for a low equivalent On-Resistance 

- hFE specified up to -3A for high current gain hold up 

- Low profile 0.6mm high package for thin applications 

- RθJA efficient, 60% lower than SOT23 

- 2 

- • 4mm footprint, 50% smaller than SOT23 

## **Mechanical Data** 

   - Case: DFN2020B-3 

   - Case material: Molded Plastic. “Green” Molding Compound. 

   - Terminals: Pre-Plated NiPdAu leadframe. 

   - Nominal package height: 0.6mm 

   - UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Weight: 0.01 grams (approximate) 

- **Lead-Free, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. "Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- MOSFET Gate Driving 

- DC-DC Converters 

- Charging Circuits 

- Power switches 

- Motor control 

**==> picture [422 x 116] intentionally omitted <==**

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C<br>DFN2020B-3<br>B<br>e e O E f<br>Bottom View<br>Device Symbol<br>Top View  Bottom View Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Informationg Information Information**|||||
|---|---|---|---|---|
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|ZXTP722MATA|S4|7|8|3000|



Notes: 1. No purposefully added lead. 

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com 

## **Marking Information** 

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**----- Start of picture text -----**<br>
S4 S4 = Product Type Marking code<br>Top View<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP722MA** ~~[~~ 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage||VCBO|-70|V|
|Collector-Emitter Voltage||VCEO|-70||
|Emitter-Base Voltage||VEBO|-7||
|Peak Pulse Current||ICM|-3|A|
|Continuous Collector Current|(Note 3)|IC|-2.5||
||(Note4)||-2.7||
|Base Current||IB|-1||



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 3)|PD|1.5<br>12|W<br>mW/°C|
||(Note 4)||2.45<br>19.6||
|Thermal Resistance, Junction to Ambient|(Note 3)|RθJA|83|°C/W|
||(Note4)||51||
|Thermal Resistance,Junction to Lead|(Note 5)|RθJL|16.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



Notes: 3. For a device surface mounted on 31mm x 31mm (10cm[2] ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.  The entire exposed collector pad is attached to the heatsink. 

4. Same as note (3), except the device is measured at t ≤ 5 sec. 

5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead). 

2 of 7 **www.diodes.com** 

ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTP722MA** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
2.0<br>V LimitedCE(SAT) ee 10 sqcm<br>Single<br>1.5<br>1 1oz Cu<br>LE TINONSNUTING N/T < T =25°C<br>DC amb<br>1s 1.0<br>POT I PSTIRO SAT a<br>0.1 100ms<br>PCT CTSA SEREEDNEEEEEE<br>10ms<br>0.5<br>1ms<br>100us<br>Single Pulse, Tamb=25°C<br>0.01 PIT 0.0 ERR RReeeNE<br>0.1 1 10 100 0 25 50 75 100 125 150<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>225<br>80 10 sqcm 200<br>Single nS SSE aeeee<br>1oz Cu 175<br>T =25°C<br>60 amb 150<br>D=0.5 125<br>i A EASE<br>40 100 1oz copper<br>Cag HTT AT TT EHS<br>Bc 75 HE HH<br>D=0.2 Single Pulse<br>20 50<br>wireRN [tall!] D=0.05 A al SseEHH eaeSSH<br>D=0.1 25 2oz copper<br>0 0<br>100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 100<br>Pulse Width (s) Board Cu Area (sqcm)<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

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Thermal Resistance v Board Area<br>**----- End of picture text -----**<br>


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3.5<br>T =25°C<br>3.0 amb 2oz copper<br>T j max =150 ° C eeqt ft tT LAToll<br>2.5 Continuous a I<br>Sine:<br>2.0 PT We TTT<br>PT TT TTTTT<br>1.5 PT ETT [TT] ATTA<br>1.0 tta eell 1oz copper HELI<br>Perr<br>0.5 ea OT TTT ST ET<br>PT [TE] TE [TTT] CE TTT ET TT<br>0.0 PT [ET][TT)] ETT<br>0.1 1 10 100<br>Board Cu Area (sqcm)<br> Dissipation (W)<br>D<br>P<br>**----- End of picture text -----**<br>


## **Power Dissipation v Board Area** 

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ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP722MA** [| 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|-70|-150|-|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage(Note 6)|BVCEO|-70|-125|-|V|IC= -10mA|
|Emitter-Base Breakdown Voltage|BVEBO|-7|-8.5|-|V|IE= -100µA|
|Collector Cutoff Current|ICBO|-|-|-100|nA|VCB= -55V|
|Emitter Cutoff Current|IEBO|-|-|-100|nA|VEB= -6V|
|Collector Emitter Cutoff Current<br>~~ee eee~~|ICES<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|-100<br>~~eee~~|nA<br>~~eee~~|VCES= -55V<br>~~eee~~|
|Static Forward Current Transfer Ratio (Note 6)<br>~~ee eee~~<br>~~re~~|hFE<br>~~eee~~<br>~~ee~~|300<br>300<br>175<br>40<br>-<br>~~eee~~<br>~~ee~~|470<br>450<br>275<br>60<br>10<br>~~eee~~<br>~~ee~~|-<br>-<br>-<br>-<br>-<br>~~eee~~<br>~~ee~~|-<br>~~eee~~<br>~~ee~~|IC= -10mA, VCE= -5V<br>IC= -100mA, VCE= -5V<br>IC= -1A, VCE= -5V<br>IC= -1.5A, VCE= -5V<br>IC= -3A,VCE= -5V<br>~~eee~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage (Note 6)<br>~~ee eee~~<br>~~re~~|VCE(sat)<br>~~eee~~<br>~~ee~~|-<br>-<br>-<br>-<br>~~eee~~<br>~~ee~~|-35<br>-135<br>-140<br>-175<br>~~eee~~<br>~~ee~~|-50<br>-200<br>-220<br>-270<br>~~eee~~<br>~~ee~~|mV<br>~~eee~~<br>~~ee~~|IC= -0.1A, IB= -10mA<br>IC= -0.5A, IB= -20mA<br>IC= -1A, IB= -100mA<br>IC= -1.5A,IB= -200mA<br>~~eee~~<br>~~ee~~|
|Base-Emitter Turn-On Voltage(Note 6)<br>~~re~~|VBE(on)<br>~~ee~~|-<br>~~ee~~|-0.78<br>~~ee~~|-1.00<br>~~ee~~|V<br>~~ee~~|IC= -1.5A,VCE= -5V<br>~~ee~~|
|Base-Emitter Saturation Voltage(Note 6)<br>~~re ~~<br>~~SE~~|VBE(sat)<br> ~~ee~~<br>~~SE~~|-<br>~~ee~~<br>~~SE~~|-0.94<br>~~ee~~<br>~~SE~~|-1.05<br>~~ee~~<br>~~SE~~|V<br>~~ee~~<br>~~SE~~|IC= -1.5A,IB= -200mA<br>~~ee~~<br>~~SE~~|
|Output Capacitance<br>~~SE~~|Cobo<br>~~SE~~|-<br>~~SE~~|14<br>~~SE~~|20<br>~~SE~~|pF<br>~~SE~~|VCB= -10V. f = 1MHz<br>~~SE~~|
|Transition Frequency<br>~~SE~~|fT<br>~~SE~~<br>~~oo~~|150<br>~~SE~~<br>~~oo~~|180<br>~~SE~~<br>~~oo~~|-<br>~~SE~~<br>~~oo~~|MHz<br>~~SE~~|VCE= -10V, IC= -50mA,<br>f = 100MHz<br>~~SE~~|
|Turn-On Time<br>~~ee~~|ton<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|40<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|ns<br>~~ee~~|VCC= -50V, IC= -1A<br>IB1= IB2= -50mA<br>~~ee~~|
|Turn-Off Time<br>~~ee~~|toff<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|700<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|ns<br>~~ee~~||



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ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTP722MA** 

## **Typical Electrical Characteristics** 

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1 0.4<br>A Tamb=25°C MB)EeeAie eeoeARYeeA ei 0.3 I C /I B =10 mins |<br>I C /I B =50<br>100m TTT| NZsmc AAAI PE ET |<br>0.2<br>I C /I B =20 ee 150°C<br>SSaiiii [meets] I C /I B =10 0.1 PE 100°C LOT A<br>25°C<br>10m Smee IC/IB=5 pa) ei<br>-55°C<br>Sa see 0.0 as<br>1m 10m 100m 1 10 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>800700 b>PtSREeT 150°C aTTT V CE =5V imaime 1.0 IC/IB=10 ] -55°C | 25°C pp. O|<br>St PtH —se<br>600 100°C 0.8<br>PNY Ee<br>500<br>400 25°C 0.6 150°C<br>300 SUP SEEE ee’ aes ee ieee weenie<br>Ee a SS<br>200 -55°C 0.4 100°C<br>100 PEERSTooeeri peeTEi<br>0 Eee tTeee WdNH 0.2 eeBe wins ine<br>1m 10m 100m 1 1m 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =5V<br>25°C<br>Pe -55°C AN TP gl<br>0.8 Tn ty<br>Se<br>eset |S<br>0.6<br>ENieA<br>er A<br>ee |<br>0.4 peeantl 150°C ail<br>0.2 eTETT 100°C ET<br>PTTETT PP<br>1m 10m 100m 1<br>- IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>- V<br> Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


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ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP722MA** [| 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
A3 DFN2020B-3<br>A<br>SEATING PLANE Dim  Min  Max  Typ<br>A1 A  0.57 0.63 0.60<br>A1  0 0.05 0.02<br>u le D ely SSE A3  ⎯  ⎯  0.152  =<br>b 0.20 0.30 0.25<br>D2<br>Z D  1.95 2.075 2.00<br>L D2  1.22 1.42  1.32<br>D4 D4  0.56 0.76 0.66<br>e  ⎯ ⎯ 0.65<br>E  1.95 2.075 2.00<br>E E2 E4 E2  0.79 0.99 0.89<br>E4  0.48 0.68 0.58<br>L  0.25 0.35 0.30<br>Z  ⎯ ⎯ 0.225<br>eign b |m====<br>e e All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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**----- Start of picture text -----**<br>
X<br>Y1 Dimensions Value (in mm)<br>C 1.30<br>G 0.24<br>Y X  0.35<br>X1  1.52<br>TOE ——= Y  1.09<br>G ia<br>X1 Y1  0.47<br>Y2 Y2  0.50<br>C<br>oo ==<br>**----- End of picture text -----**<br>


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ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP722MA** ~~[~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

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ZXTP722MA Document Number DS31885 Rev. 5 - 2 

January 2011 © Diodes Incorporated 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxtp722mata/trans-pnp-70v-2-5a-150deg-c-1/dp/3943453RL)
---

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