# Bipolar (BJT) Single Transistor, PNP, 12 V, 4 A, 2.45 W, DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3943450/)

**URL**: https://novapart.co/products/ZXTP717MATA/bipolar-bjt-single-transistor-pnp-12-v-4-a-245-w
**SKU**: ZXTP717MATA
**Manufacturer**: DIODES INC.
**Price**: €0.1970
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.45W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 110MHz |
| Transistor Case Style | DFN2020 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 12V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943450/)

**A Product Line of Diodes Incorporated** ~~ZETEX~~ **ZXTP717MA** 

**12V PNP LOW SATURATION SWITCHING TRANSISTOR** 

## **Features and Benefits** 

- BVCEO > -12V 

- IC = -4A Continuous Collector Current 

- Low Saturation Voltage (-140mV max @ -1A) 

- RSAT = 60 mΩ for a low equivalent On-Resistance 

- hFE specified up to -10A for a high current gain hold up 

- Low profile 0.6mm high package for thin applications 

- RθJA efficient, 60% lower than SOT23 

- 2 

- • 4mm footprint, 50% smaller than SOT23 

## **Mechanical Data** 

   - Case: DFN2020B-3 

   - Case Material: Molded Plastic. “Green” Molding Compound. 

   - Terminals: Pre-Plated NiPdAu leadframe. 

   - Nominal Package Height: 0.6mm 

   - UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Weight: 0.01 grams (approximate) 

- **Lead-Free, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. "Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- MOSFET Gate Driving 

- DC-DC Converters 

- Charging Circuits 

- Power switches 

• Motor Control 

DFN2020B-3 

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C<br>B<br>E<br>@ @ o t<br>Top View  Bottom View Device Symbol  Bottom View<br>Pin-Out<br>**----- End of picture text -----**<br>


||||||Bottom View|Bottom View|
|---|---|---|---|---|---|---|
|Top View|Bottom View|Device Symbol||Device Symbol|Bottom View|Bottom View|
||||||Pin-Out||
|**Ordering Information**|**Information**(Note 3)||||||
||||||||
|**Product**|**Marking**|**Reel size (inches)**||**Tape width (mm)**||**Quantity per reel **|
|ZXTP717MATA|S1|7||8||3000|



## **Ordering Information** (Note 3) 

Notes: 1. No purposefully added lead. 

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com 

3. For Packaging Details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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S1 S1 = Product Type Marking code<br>Top View<br>**----- End of picture text -----**<br>


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ZXTP717MA Document Number DS31881 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP717MA** [ 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage||VCBO|-20|V|
|Collector-Emitter Voltage||VCEO|-12||
|Emitter-Base Voltage||VEBO|-7||
|Peak Pulse Current||ICM|-12|A|
|Continuous Collector Current|(Note 4)|IC|-4||
||(Note 5)||-4.5||
|Base Current||IB|-1||



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 4)|PD|1.5<br>12|W<br>mW/°C|
||(Note 5)||2.45<br>19.6||
|Thermal Resistance, Junction to Ambient|(Note4)|RθJA|83|°C/W|
||(Note 5)||51||
|Thermal Resistance,Junction to Lead|(Note 6)|RθJL|16.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



Notes: 4. For a device surface mounted on 31mm x 31mm (10cm[2] ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.  The entire exposed collector pad is attached to the heatsink. 

5. Same as note (4), except the device is measured at t ≤ 5 sec. 

6. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead). 

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ZXTP717MA Document Number DS31881 Rev. 5 - 2 

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**A Product Line of Diodes Incorporated** 

**ZXTP717MA** 

## **Thermal Characteristics** 

**==> picture [439 x 518] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>10 VCE(SAT)<br>eS Limited PE tT ey Ty 10 sqcm yy yy<br>A | 4 = ANG 1.5 Single<br>1 oz Cu<br>1 DC 1s Tamb=25°C<br>1.0<br>100ms<br>— 10ms 7S PT tT TT [PNET] TEE<br>0.1<br>1ms 0.5<br>100us<br>Sa ri | | tif tT NEEL]<br>Single Pulse, T amb =25°C<br>0.01 pe eee) 0.0 PEEPTT TE ENT\<br>0.1 1 10 0 25 50 75 100 125 150<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>225<br>10 sqcm<br>80 200<br>Single HT TT aa Se<br>1 oz Cu 175<br>60 150<br>D=0.5 125<br>atl ee at ORR<br>40 100 1oz copper<br>ae arentm at Se cat Sa<br>75<br>ed D=0.2 Single Pulse Co SSP<br>20 50<br>ue eT D=0.05 ili Eee tr TT<br>D=0.1 25 2oz copper<br>0 ST eA HUE 0 leases rnd unas<br>100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 100<br>Pulse Width (s) Board Cu Area (sqcm)<br>Transient Thermal Impedance Thermal Resistance v Board Area<br>3.5<br>1<br>3.0 T amb =25°C 2oz copper<br>T =150°C foroTC Pzaliil<br>j max<br>2.5 Continuous<br>Sime:<br>2.0 fe Too<br>a|a|<br>1.5 CCA<br>1.0 Ptes ee 1oz copper cH<br>eer<br>oo<br>0.5 te<br>A |<br>0.0 Piee oo<br>0.1 1 10 100<br>Board Cu Area (sqcm)<br>  Collector Current (A)<br>IC<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Dissipation (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Power Dissipation v Board Area** 

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ZXTP717MA Document Number DS31881 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP717MA** [| 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|-20|-35|-|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage(Note 7)|BVCEO|-12|-25|-|V|IC= -10 mA|
|Emitter-Base Breakdown Voltage|BVEBO|-7|-8.5|-|V|IE= -100µA|
|Collector Cutoff Current|ICBO|-|-|-100|nA|VCB= -16V|
|Emitter Cutoff Current|IEBO|-|-|-100|nA|VEB= -6V|
|Collector Emitter Cutoff Current<br>~~ee~~|ICES<br>|-<br>~~EE~~<br>|-<br>~~EE~~<br>|-100<br>~~EE~~<br>|nA<br>~~EE~~<br>|VCES= -10V<br>|
|Static Forward Current Transfer Ratio (Note 7)<br>~~ft~~<br>~~ee~~|hFE<br>~~ft~~<br>|300<br>300<br>180<br>60<br>45<br>~~ft~~<br>~~EE~~<br>|475<br>450<br>275<br>100<br>70<br>~~ft~~<br>~~EE~~<br>|-<br>-<br>-<br>-<br>-<br>~~ft~~<br>~~EE~~<br>|-<br>~~ft~~<br>~~EE~~<br>|IC= -10mA, VCE= -2V<br>IC= -100mA, VCE= -2V<br>IC= -2.5A, VCE= -2V<br>IC= -8A, VCE= -2V<br>IC= -10A,VCE= -2V<br>~~ft~~<br>|
|Collector-Emitter Saturation Voltage (Note 7)<br>~~ee~~|VCE(sat)<br>~~eee~~|-<br>-<br>-<br>-<br>-<br>~~EE~~<br>~~eee~~|-10<br>-100<br>-100<br>-195<br>-240<br>~~EE~~<br>~~eee~~|-17<br>-140<br>-150<br>-300<br>-310<br>~~EE~~<br>~~eee~~|mV<br>~~EE~~<br>~~eee~~|IC=- 0.1A, IB= -10mA<br>IC= -1A, IB= -10mA<br>IC= -1.5A, IB= -50mA<br>IC= -3A, IB= -50mA<br>IC= -4A,IB= -150mA<br>~~eee~~|
|Base-Emitter Turn-On Voltage(Note 7)<br>~~ee ~~|VBE(on)<br> ~~eee~~|-<br>~~EE~~<br>~~eee~~|-0.87<br>~~EE~~<br>~~eee~~|-0.96<br>~~EE~~<br>~~eee~~|V<br>~~EE~~<br>~~eee~~|IC= -4A,VCE= -2V<br>~~eee~~|
|Base-Emitter Saturation Voltage(Note 7)<br>~~ee ~~<br>~~Se~~|VBE(sat)<br> <br>~~Se~~|-<br>~~EE~~<br><br>~~Se~~|-0.97<br>~~EE~~<br><br>~~Se~~|-1.07<br>~~EE~~<br><br>~~Se~~|V<br>~~EE~~<br><br>~~Se~~|IC= -4A,IB= -150mA<br><br>~~Se~~|
|Output Capacitance<br>~~Se~~|Cobo<br>~~Se~~|-<br>~~Se~~|21<br>~~Se~~|30<br>~~Se~~|pF<br>~~Se~~|VCB= -10V. f = 1MHz<br>~~Se~~|
|Transition Frequency<br>~~Se~~|fT<br>~~Se~~|100<br>~~Se~~|110<br>~~Se~~|-<br>~~Se~~|MHz<br>~~Se~~|VCE= -10V, IC= -50mA,<br>f = 100MHz<br>~~Se~~|
|Turn-On Time<br>~~ss~~|ton<br>~~ss~~|-<br>~~ss~~|70<br>~~ss~~|-<br>~~ss~~|ns<br>~~ss~~|VCC= -6V, IC= -2A<br>IB1= IB2= -50mA<br>~~ss~~|
|Turn-Off Time<br>~~ss~~|toff<br>~~ss~~|-<br>~~ss~~|130<br>~~ss~~|-<br>~~ss~~|ns<br>~~ss~~||



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ZXTP717MA Document Number DS31881 Rev. 5 - 2 

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**A Product Line of Diodes Incorporated** 

**ZXTP717MA** 

## **Typical Electrical Characteristics** 

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**----- Start of picture text -----**<br>
0.25<br>Tamb=25°C I C /I B =50<br>Saaaimemst menace 0.20 ag RE<br>100m<br>uee e ee CHmea mesesateee ET SetaR<br>0.15 100 ° C<br>I /I =100<br>C B<br> eeeceeerec r )  © CTT TTT 25°C wg<br>0.10<br>10m<br>IC/IB=50 -55°C<br>= Soe y<br>0.05<br>I /I =10<br>C B<br>1m oanmillGanaAeML LTT | aaYLtt 0.00 SEOisemenENMICCEICMICerta BRET<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.4 630<br>i 100°C VCE=2V 1.0 I C /I B =50 Wi<br>1.2 540<br>HIBSTT TT PIT eee,Das rd<br>1.0 0 . 450 et<br>0.8<br>IN, a ae nO All|<br>0.8 I 25°C ETT 360 —_—" -55°C mae eet<br>Hil TSN ooanil<br>MUTT TP OAT I — a — Pll<br>0.6 TE TTT NUTT I 270 0.6 =n 25 ° C a<br>0.4 CoAT ST 180 er ame<br>-55°C 100°C<br>0.2 CronTT ONTT T 90 0.4 Pai<br>HHH HE a =H THT<br>0.0 ni 0 PUI TUT) ETI CTH<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =2V<br>TEE<br>0001020)<br>0.8<br>CICA<br>-55°C<br>0.6 Samant eal<br>mn ec |e AT<br>25°C<br>TN eT<br>0.4 100°C<br>ea AMA<br>UTM cat IE EET<br>0.2 PANIITCUTTIME F I TTT<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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ZXTP717MA Document Number DS31881 Rev. 5 - 2 

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**A Product Line of Diodes Incorporated ZXTP717MA** | 

## **Package Outline Dimensions** 

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A3 DFN2020B-3<br>A<br>SEATING PLANE Dim  Min  Max Typ<br>a A1 A  0.57 0.63 0.60<br>A1  0 0.05 0.02<br>D A3  ⎯  ⎯  0.152<br>D2 b 0.20 0.30 0.25<br>Z D  1.95 2.075 2.00<br>L D2  1.22 1.42 1.32<br>D4 D4  0.56 0.76 0.66<br>e  ⎯ ⎯ 0.65<br>E  1.95 2.075 2.00<br>v E E2 E4 ie = «EEEE E2  0.79 0.99 0.89<br>E4  0.48 0.68 0.58<br>L  0.25 0.35 0.30<br>eins b === Z  ⎯ ⎯ 0.225<br>e e All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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X<br>**----- End of picture text -----**<br>


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Y1 Dimensions Value (in mm)<br>C 1.30<br>Y G 0.24<br>X  0.35<br>X1  1.52<br>G X1 Y  1.09<br>Y2 Y1  0.47<br>C Y2  0.50<br>H ==<br>**----- End of picture text -----**<br>


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ZXTP717MA Document Number DS31881 Rev. 5 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTP717MA** [ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtp717mata/trans-pnp-12v-4a-150deg-c-1-5w/dp/3943450)
---

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