# Bipolar Transistor Array, Dual PNP, 60 V, 2 A

![Product image](https://novapart.co/image/farnell:3944380/)

**URL**: https://novapart.co/products/ZXTP56060FDBQ-7/bipolar-transistor-array-dual-pnp-60-v-2-a
**SKU**: ZXTP56060FDBQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.1790
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual PNP |
| Power Dissipation Npn | - |
| Power Dissipation Pnp | 510mW |
| Transistor Case Style | U-DFN2020 |
| Transition Frequency Npn | - |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | - |
| Dc Current Gain Hfe Min Pnp | 50hFE |
| Continuous Collector Current Npn | - |
| Continuous Collector Current Pnp | 2A |
| Collector Emitter Voltage Max Npn | - |
| Collector Emitter Voltage Max Pnp | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944380/)

**ZXTP56060FDBQ** > **60V DUAL PNP LOW VCE(sat) TRANSISTOR** 

## **Description** 

This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. 

## **Features** 

- BVCEO > -60V 

- IC = -2A High Continuous Collector Current 

- RCE(sat) = 250mΩ for a Low Equivalent On-Resistance 

- Sidewall Tin Plating for Wettable Flanks in AOI 

- PD Up to 2.47W for Power Demanding Applications 

- Low Profile 0.6mm High Package for Thin Applications 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Mechanical Data** 

- Case: U-DFN2020-6 (SWP) (Type A) with Sidewall Plating 

- Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish—Matte Tin, Solderable per MIL-STD-202, Method 208 

- Weight: 0.0065 grams (Approximate) 

## **Application** 

   - Matrix LED Lighting 

   - Power Management 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The ZXTP56060FDBQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

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## **Ordering Information** (Note 4) 

|**Part Number**|**Marking**|**Reel Size (inches)**|**Tape Width (mm)**|**Quantity Per Reel**|
|---|---|---|---|---|
|ZXTP56060FDBQ-7|2D9|7|8|3000|
|ZXTP56060FDBQ-13R|2D9|13|8|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

U-DFN2020-6 (SWP) (Type A) 

2D9 = Product Type Marking Code Y = Year: 0~9 

2D9 W = Week: A~Z: 1~26 week; YWX a~z:  27~52 week; z represents 52 and 53 week 

X = A~Z: Internal code 

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ZXTP56060FDBQ Datasheet number: DS39605 Rev. 2 - 2 

17 February 2020 © Diodes Incorporated 

**ZXTP56060FDBQ** 

## **Absolute Maximum Ratings – Q1 & Q2** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratings – Q1 & Q2gs – Q1 & Q2s – Q1 & Q2Q1 & Q21 & Q2Q22 **(@TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-60|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-2|A|
|Peak Pulse Collector Current|ICM|-3|A|
|Base Current|IB|-300|mA|
|Peak Base Current|IBM|-1|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Notes 5 & 7)|PD|405|mW|
||(Notes 5 & 8)||510||
||(Notes 6 & 7)||1650||
||(Notes 6 & 8)||2470||
|Thermal Resistance, Junction to Ambient|(Notes 5 & 7)|RθJA|308|°C/W|
||(Notes 5 & 8)||245||
||(Notes 6 & 7)||76||
||(Notes 6 & 8)||51||
|Thermal Resistance,Junction to Lead|(Note 9)|RθJL|18|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 10) 

|**ESD Ratingsgss **(Note 10)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge – Human BodyModel|ESD HBM|4000|V|3A|
|Electrostatic Discharge – Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as Note 5, except the device is mounted with the collector pad on 28mm × 28mm (8cm[2] ) 2oz copper. 

7. For a dual device with one active die. 

8. For dual device with two active die running at equal power. 

9. Thermal resistance from junction to solder-point (on the exposed collector pads). 

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**ZXTP56060FDBQ** ~~7~~ 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
2. 5<br>Notes 7 & 9<br>2. 0 PIN<br>Notes 7 & 8<br>1. 5 wae<br>Notes 6 & 8<br>1. 0 KO<br>Notes 6 & 9 > aN SZ<br>0. 5<br>4 BEN X<br>0. 0 NGSN<br>0 20 40 60 80 100 120 140 160<br> Temperature (oC)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Derating Curve** 

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**----- Start of picture text -----**<br>
33 0 10 0<br>30 0<br>27 0 A T RLS =25 o C De a SH Suh ot sei ati Sei atte<br>A<br>24 0 aii See Notes 6 & 8 >All OS Single Pulse mui<br>21 0 ail A el 1 0 SUING CA TA=25 o C Hill<br>18 0 D=0.5 See Notes 6 & 8<br>15 0 eee A" ff SS SEE, Saati EC<br>12 0 PT THIN 7  TTTdee StaSree a ste<br>Yh 1 UTI CTITIITSSSUT<br>9 0 D=0.2 Ae Single Pulse ll Sees eect ee ttm, Seti esse eect<br>ee CTT TTT TTT<br>6 0 D=0.05<br>3 0 Snel D=0.1 TT Con Cc Con CETC<br>0 STly cull CUI Trl 0. 1 Cn<br>100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>8 0 10 0<br>7 0 lll T A =25oC HA LIM TUMv yeumflll| ooANYR TT TT ooTTT|)<br>6 0 | See Notes 7 & 8 py dil(il ANC CT TTT<br> Ill I Ty A BD<br>Single Pulse<br>5 0 D=0.5 LA il CH TA=25oC mill<br>4 0 ye "Aeee | TI 1 0 a LM STLaS See Notes 7 & 8 ill nll<br>3 0 D=0.2 |||LfLaeVi Single Pulse ail erANTT Tt<br>2 0 WA Aili AE<br>D=0.05<br>4G- ai an a BSE<br>1 0<br>FE D=0.1<br>0 eseti 010 i it 1 BU ai<br>100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>C/W)<br>o<br> Maximum Power (W)<br>Thermal Resistance (<br>C/W)<br>o<br> Maximum Power (W)<br>Thermal Resistance (<br>**----- End of picture text -----**<br>


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ZXTP56060FDBQ Datasheet number: DS39605 Rev. 2 - 2 

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**ZXTP56060FDBQ** 

**Electrical Characteristics – Q1 & Q2** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics – Q1 & Q2**(@TA = +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—~~|**Symbol**<br>~~—~~|**Min**<br>~~—~~|**Typ**<br>~~—~~|**Max**<br>~~—~~|**Unit**<br>~~—~~|**Test Conditions**<br>~~—~~|
|Collector-Base Breakdown Voltage<br>~~—~~|BVCBO<br>~~—~~|-60<br>~~—~~|—<br>~~—~~|—<br>~~—~~|V<br>~~—~~|IC= -100µA<br>~~—~~|
|Collector-Emitter Breakdown Voltage(Note 11)<br>~~ee~~<br>~~a~~|BVCEO<br>~~ee~~|-60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IC= -10mA<br>~~ee~~|
|Emitter-Base Breakdown Voltage<br>~~ee~~<br>~~a~~|BVEBO<br>~~ee~~|-7<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IE= -100µA<br>~~ee~~|
|Collector-Base Cutoff Current<br>~~a~~<br>~~—————~~|ICBO<br>~~—————~~|—<br>~~—————~~|—<br>~~—————~~|-100<br>~~—————~~|nA <br>~~—————~~|VCB= -48V,IE= 0<br>~~—————~~|
|||—<br>~~—————~~|—<br>~~—————~~|-50<br>~~—————~~|µA<br>~~—————~~|VCB= -48V,IE= 0,TA= +150°C<br>~~—————~~|
|Emitter-Base Cutoff Current<br>~~a~~|IEBO|—|—|-100|nA|VEB= -5.6V,IC= 0|
|DC Current Gain (Note 11)<br>~~a~~|hFE<br>~~eS~~|170<br>~~eS~~|—<br>~~=~~|—<br>~~=~~|—|VCE= -2V,IC= -100mA|
|||140<br>~~eS~~|—<br>~~=~~|—<br>~~=~~||VCE= -2V,IC= -500mA|
|||110<br>~~eS~~|—<br>~~=~~|—<br>~~=~~||VCE= -2V,IC= -1A|
|||50<br>~~eS ~~|—<br> ~~=~~|—<br>~~=~~||VCE= -2V,IC= -2A|
|Collector-Emitter Saturation Voltage (Note 11)<br>~~ES~~|VCE(sat)<br>~~ES~~|—<br>~~ES~~|—<br>~~ES~~|-120<br>~~ES~~|mV<br>~~ES~~<br>|IC= -500mA,IB= -50mA<br>~~ES~~|
|||—<br>~~ES~~<br>~~ee~~|—<br>~~ES~~<br>~~ee~~|-250<br>~~ES~~<br>~~eee~~||IC= -1A,IB= -50mA<br>~~ES~~<br>~~Pe~~|
|||—<br>~~ES~~<br>~~ee~~|—<br>~~ES~~<br>~~ee~~|-420<br>~~ES~~<br>~~eee~~||IC= -0.7A, IB= -7mA<br>~~ES~~<br>~~Pe~~|
|||—<br>~~ES~~<br>~~ee ~~|—<br>~~ES~~<br> ~~ee ~~|-450<br>~~ES~~<br> ~~eee ~~||IC= -2A, IB= -200mA<br>~~ES~~<br> ~~Pe~~|
|Equivalent On-Resistance(Note 11)|RCE(sat)|—<br>~~eS~~|—<br>~~eS~~|250<br>~~eS SO~~|mΩ<br>~~SO~~|IE= -1A,IB= -50mA<br>~~SO~~|
|Base-Emitter Saturation Voltage (Note 11)<br>~~|~~|VBE(sat)<br>~~|~~|—<br>~~|~~<br>~~eS~~|—<br>~~|~~<br>~~eS~~|-1<br>~~|~~<br>~~eS SO~~|V<br>~~|~~<br>~~SO~~|IC= -0.5A,IB= -50mA<br>~~|~~<br>~~SO~~|
|||—<br>~~|~~<br>~~eS~~|—<br>~~|~~<br>~~eS~~|-1<br>~~|~~<br>~~eS SO~~||IC= -1A,IB= -50mA<br>~~|~~<br>~~SO~~|
|||—<br>~~|~~<br>~~eS~~|—<br>~~|~~<br>~~eS~~|-1.25<br>~~|~~<br>~~eS SO~~||IC= -2A,IB= -200mA<br>~~|~~<br>~~SO~~|
|Base-Emitter Turn-on Voltage(Note 11)|VBE(on)<br>~~ee~~|—<br>~~eS~~<br>~~ee~~|—<br>~~eS~~<br>~~ee~~|-0.9<br>~~eS SO~~<br>~~eee~~|V<br>~~SO~~<br>~~eee~~|VCE= -2V,IC= -0.5A<br>~~SO~~|
|Turn-On Time<br>~~ee~~|ton<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|90<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~|IC= -1A, IB1= -IB2= 50mA;<br>TA= +25°C<br>~~ee~~|
|DelayTime<br>~~ee~~|td<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~||
|Rise Time<br>~~ee~~|tr<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|80<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~||



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ZXTP56060FDBQ Datasheet number: DS39605 Rev. 2 - 2 

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**ZXTP56060FDBQ** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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600<br>V Vce=2V CE  = 2V  4 Tamb TA = 25°C = 25°C  50mA<br>500 Fe TO CoCo =<br>ee STI - 45mA be<br>400 100 ° C 3 40mA 25mA<br>CT1 re EE | | | Lee|SSet 30mA 20mA<br>35mA<br>300 SL | BSS ETT 15mA<br>25°C 2<br>10mA<br>200 CASAS1 (EEGame<br>POISE -55°C CCT NCETTH 1 fABeLieFe 5mA<br>100<br>PT| TS Zatty Pe tr<br>0 PCIE CEE CnC 0 yi}fa | TY | dT | | tt<br>1 10 100 1k 10k 0 1 2 3 4 5<br>IC   Collector Current (mA) VCE(SAT) (V)<br>h  v  I I v V<br>FE C C CE(SAT)<br>1.2 3.0<br>V CE =2V T T amb A  = 25°C  = 25°C 18mA 20mA<br>1.0 ro 2.5 Ce<br>16mA<br>tt 0010 Sere 12mA<br>14mA<br>0.8 CATT So 2.0 es 10mA<br>PCC ETE Ee FT |TBST 8mA<br>0.6 -55°C een CTT er AT 1.5 |ere 6mA<br>aere =m YerPee<br>25°C 4mA<br>0.4 att 1.0 | Zee<br>oe [ne] 0 728 ae<br>eee COT DPeEET<br>0.2 100°C 0.5 2mA<br>PPP TT EEC CO VOCETEE Err<br>0.0 CoonCon cooeT CTC 0.0 POCCPeepeeredter<br>0.1 1 10 100 1000 10000 0 1 2 3 4 5 6<br>IC   Collector Current (mA) VCE(SAT) (V)<br>V  v I I v V<br>BE(ON) C C CE(SAT)<br>1.2 1<br>I C /I B = 20 IC/I B =20<br>1.0 A HHHEEA<br>100°C<br>Mi aullll| Y<br>Ee 0.1 FCM CCI alCCT<br>0.8 Err Se SE mematiattiiaaeat<br>-55°C<br>0.6<br>ll ern Pr SS<br>0.01<br>ai 25°C a ei A A -55°C 25°C<br>0.4<br>100°C<br>0.2 poeer oa a 0.001 YTPLATE ELUMTTTET EII ETT TTI<br>0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000<br>IC   Collector Current (mA) IC   Collector Current (mA)<br>V  v I V  v  I<br>BE(SAT) C CE(SAT) C<br>Gain<br>FE<br>h<br>  Collector Current (A)<br>IC<br> (V)<br>BE(ON)<br>V<br>  Collector Current (A)<br>IC<br>  (V)  (V)<br>BE(SAT) CE(SAT)<br>V V<br>**----- End of picture text -----**<br>


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**ZXTP56060FDBQ** [ 

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1 N c o R P<br>D0<br>**----- End of picture text -----**<br>


## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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10 1<br>T T amb A = = 25°C  25°C  IC/I B =100<br>1 PTA E T O FEUTTTE TTT TeHEHEre i<br>SS———|SESSa —<_— SSSnl ———SS SSS SEER cer iil 25°C TE LE 125°C 150°C ayyNW vf<br>Ic/Ib=100<br>0.1 Ic/Ib=50 tee 0.1 [—Set<br>Ic/Ib=10 -55 ° C<br>0.01 PgTT iitEee | | EHH| HEHCth Pte0<br>0.001 aCoell 0.01 TT FATA ETI TT<br>0.1 1 10 100 1000 10000 0.1 1 10 100 1000<br>IC   Collector Current (mA) IC   Collector Current (mA)<br>V  v  I V  v  I<br>CE(SAT) C CE(SAT) C<br> (V)  (V)<br>CE(SAT) CE(SAT)<br>V V<br>**----- End of picture text -----**<br>


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ZXTP56060FDBQ Datasheet number: DS39605 Rev. 2 - 2 

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**ZXTP56060FDBQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (SWP) (Type A)** 

|**U-DFN2020-6 (SWP)**<br>**(Type A)**|**U-DFN2020-6 (SWP)**<br>**(Type A)**|**U-DFN2020-6 (SWP)**<br>**(Type A)**|**U-DFN2020-6 (SWP)**<br>**(Type A)**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|0.55|0.65|0.60|
|**A1**|0.00|0.05|0.03|
|**A3**|--|--|0.127|
|**b**|0.25|0.35|0.30|
|**D**|1.95|2.05|2.00|
|**D2**|0.57|0.77|0.67|
|**E**|1.95|2.05|2.00|
|**E2**|0.80|1.00|0.90|
|**e**|0.65BSC|||
|**k**<br>**L**|0.30BSC<br>0.22<br>032<br>0.27|||
|**L**<br>0.22<br>0.32<br>0.27<br>**z**<br>0.20BSC<br>**All Dimensions in mm**||||



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A1 . .<br>A3 D  1.95 2.05 2.<br>A D2  0.57  0.77<br>E  1.95  2.05<br>S eating Plane<br>E2  0.80  1.00<br>D<br>e  0.65BSC<br>e k  0.30BSC<br>L  0.22  0.32  0<br>z  0.20BSC<br>D2 k<br>All Dimensions in mm<br>eean<br>Cut-off end of<br>non-functional E E2<br>bonding wire<br>L<br>‘aor z b | } ;<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-DFN2020-6 (SWP) (Type A)<br>X2<br>C G2<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G<br>G  0.200<br>G1 G1  0.210<br>Y2 Y1 G2  0.250<br>X  0.400<br>X1  0.770<br>ce<br>Y X2  1.700<br>Y  0.450<br>Y1  1.000<br>Y2  2.300<br>X1 X<br>“nom ==<br>**----- End of picture text -----**<br>


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**ZXTP56060FDBQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXTP56060FDBQ Datasheet number: DS39605 Rev. 2 - 2 

17 February 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXTP56060FDBQ-7/bipolar-transistor-array-dual-pnp-60-v-2-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxtp56060fdbq-7/bipolar-array-dual-pnp-60v-2a/dp/3944380)
---

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