# Bipolar (BJT) Single Transistor, PNP, 40 V, 2 A, 730 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3577031/)

**URL**: https://novapart.co/products/ZXTP5240F-7/bipolar-bjt-single-transistor-pnp-40-v-2-a-730-mw
**SKU**: ZXTP5240F-7
**Manufacturer**: DIODES INC.
**Price**: €0.1050
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 730mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 100MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2A |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577031/)

**ZXTP5240F** CT **40V PNP LOW SATURATION TRANSISTOR IN SOT23** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -40V 

- IC = -2A high Continuous Collector Current 

- ICM = -3A Peak Pulse Current 

- Low Saturation Voltage -225mV Max @ IC = -1A. 

- RCE(SAT) = 90mΩ at 0.5A for a Low Equivalent On-Resistance 

- 730mW Power Dissipation 

- Complimentary NPN Type: ZXTN4240F 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight 0.008 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Application** 

- Gate Driving MOSFETs and IGBTs 

- Load Switch 

- DC-DC Converters 

- Battery Charging 

**==> picture [353 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>E<br>C<br>C<br>B<br>B<br>E<br>Top View  Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

||**Product**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|---|
||ZXTP5240F-7|2D5|7|8|3,000|
|Notes:|Notes:<br>1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.|||||



2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

||||||||||2D5 = Product Type Marking Code||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Date CodeKey<br>**Year**<br>**2018**<br>**Code**<br>F<br>~~— a~~||**2019**<br>G||**2020**<br>**2021**<br>H<br>I<br>**ZP2**<br>2D5<br>~~ee~~|||**2022**<br>J<br>**YM**||**2023**<br>**2024**<br>**2025**<br>K<br>L<br>M<br>YM = Date Code Marking<br>Y = Year (ex: E = 2018)<br>M = Month (ex: 9 = September)|**2026**<br>N||**2027**<br>O||**2028**<br>P|
|**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~—————————~~|||||||||||||||



1 of 7 **www.diodes.com** 

ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 

**ZXTP5240F** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-40|V|
|Emitter-Base Voltage|VEBO|-5|V|
|Peak Pulse Collector Current|ICM|-3|A|
|Continuous Collector Current|IC|-2|A|
|Base Current|IB|-300|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|730|mW|
|Power Dissipation (Note 6)|PD|600|mW|
|Thermal Resistance, Junction to Ambient Air (Note 5)|RθJA|171|°C/W|
|Thermal Resistance, Junction to Ambient Air (Note 6)|RθJA|209|°C/W|
|Thermal Resistance, Junction to Lead (Note 7)|RθJL|75|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as note (5), except the device is mounted on minimum recommended pad layout. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 

**ZXTP5240F** 

## **Thermal Characteristics and Derating Information** 

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1 0 0.8<br>VCE(sat) 15mm x 15mm 1oz Copper 0.7 15mm x 15mm 1oz Copper<br>Limited<br>L SN UI : NN l 0.6 \<br>4 cS FERNS EEE<br>1<br>0.5<br>DC<br>0.4<br>PEP 1s [| msSIN/ J NS FO<br>100ms 0.3<br>100 m<br>10ms 0.2<br>Single Pulse 1ms<br>0.1<br>T amb =25°C 100µs<br>10 m 100m i 1 a 10 TET 0.00 Pt 20 40 | 60 | 80 |ET 100 120 140 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Safe Operating Area** 

## **Derating Curve** 

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160 T amb =25°C Single Pulse<br>15mm x 15mm 1oz Copper 100 Tamb=25°C<br>15mm x 15mm 1oz Copper<br>120 ‘avai TT 1 Terri CT Tn Tot il<br>D=0.5<br>i ae Wa ata) | 10 SR A |<br>80 seria pe 0000<br>Sf - == NT See<br>D=0.2 Single Pulse<br>40 LoAll EE | a lS<br>D=0.05 1<br>D=0.1<br>sri ail tia UTITTT<br>0<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

**Pulse Power Dissipation** 

3 of 7 **www.diodes.com** 

ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 

**ZXTP5240F** ~~—~~ 

## DIODES 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|DG|Characteristic|Symbol|Min|GON|Typ|GO|Max|Unit|(OO|Test Conditions|
|pT|OFF CHARACTERISTICS|
|OO|Collector-Base Breakdown Voltage|BVCBO|-40|||V|IC = -100µA|
|GGGG|Collector-Emitter Breakdown VoltaEmitter-Base Breakdown Voltage|ge (Note 9)|BVBVCEOEBO|-40 -5|COOGO|||V V|IICE = -100 = -10mA µA|
|||-100|nA|VCB = -30V, IE = 0|
|Collector-Base Cutoff Current|ICBO|
|ee|||-50|µA|VCB = -30V, IE = 0, TA = +150°C|
|GO|Emitter-Base Cutoff Current|IEBO|a||ee||-100|ee|nA|VEB = -4V, IC = 0|
|ON CHARACTERISTICS|(Note 9)|
|300|||VCE = -2V, IC = -0.1A|
|a|260|ee|||pO|VCE = -2V, IC = -0.5A|
|DC Current Gain|hFE|ee|210|ee||||pO|VCE = -2V, IC = -1A|
|aa|100|eeee|||popo|VCE = -2V, IC = -2A|
|||-100|IC = -100mA, IB = -1mA|
|a|ee|po|
|a||-45|ee|-110|po|IC = -500mA, IB = -50mA|
|Collector-Emitter Saturation Voltage|VCE(SAT)|||-225|mV|IC = -750mA, IB = -15mA|
|po|||-225|po|IC = -1A, IB = -50mA|
|aa||eeee||-350|popo|IC = -2A, IB = -200mA|
|pf|Equivalent On-Resistance|RCE(SAT)||90|220|mΩ|IC = -500mA, IB = -50mA|
|GG|Base-Emitter Saturation Voltage|VBE(SAT)|||-1.1|V|IC = -2A, IB = -200mA|
|DDO|Base-Emitter Turn-On Voltage|VBE(ON)|||-0.75|V|VCE = -2V, IC = -100mA|
|SMALL SIGNAL CHARACTERISTICS|
|pC|tD||21|GO||DDO|
|es|tR|ee||ee|22||VCC = -10V,|
|Switching times|ee|tS|ee||eee|120||ee|ns|IIC B1= -500mA,   = IB2 = -50mA|
|ee|tF|ee||ee|23||ee|
|es|ee|ee|
|Transition Frequency|fT|100|||MHz|VCE = -10V, IC = -100mA,|
|f = 100MHz|
|PD|Output Capacitance|COB|GO|||OD|28|pF|VCB = -10V, f = 1MHz|
|Note:|9. Measured under pulsed conditions.  Pulse width  300µs. Duty cycle  2%.|

**----- End of picture text -----**<br>


## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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2.0 10,000<br>1.81.6 IB = -5mA Td LT TEI TTT PET V CE  = -2V<br>T A  = 150°C<br>1.4 Sean I B  = -4mA a 1,000 creer TA = 85°C CT re<br>1.2<br>IB = -3mA TA = 25 ° C<br>1.0 _YeeTT | | | ETS<br>TA = -55°C<br>0.8 fo — I B  = -2mA 100 \<br>0.6<br>(— NT neti mani<br>0.4 I B  = -1mA<br>0.2 PERE eae<br>0 10<br>0 PT 1 2 TTT 3 4 5 ttt 6 7 tt 8 9 10 1 LATTE 10 UTE 100 EIT 1,000 TTT 10,000<br>-VCE, COLLECTOR-EMITTER VOLTAGE (V) -IC, COLLECTOR CURRENT (mA)<br>Figure 1 Typical Collector Current  Figure 2 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>, COLLECTOR CURRENT (A)<br>C<br>-I<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 

**ZXTP5240F** 

## 'imeoereoerRaATeéeoD Dro DLS. 

**==> picture [488 x 678] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 aSo8 e e 1.2 PAINECA IE I<br>a a 1.0 PTT TTM LUTTE VCE = -2V | TTT<br>I C /I B = 10<br>[nu] [CO]<br>0.1 SmaT/AMaRnic T A  = 150°C  att 0.8 CETTE [T] rm VI<br>PoreSEart TA = 85 ° C _ Cee|Mytn ;CIEL T A ~iioee—]  = -55°C ml |Eea)iJUa,/<br>ee T A  = 25°C Ceo 0.6 ae ee aaullll<br>tT TE A BEI |_| LT || Le A<br>PA TA = -55°C th eri T A = 25°C eT”<br>0.01 e rr iil 0.4 aml aailll CTI<br>ee || TA = 85°C | TN]<br>ae anil<br>aa eee L aa |<br>aa 0.2 = TA = 150 ° C MTA TT<br>0.001 0<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Figure 3 Typical Collector-Emitter Saturation Voltage Figure 4 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 ETT Tl 1,000 FfSSSeeSateHH<br>1.0 a IC/IB = 10 a ee f = 1MHz oH<br>CU TUNEaner ||Tl Sedott Trl i<br>100<br>UTMLTT |HtTTI pot ey=Se<br>0.8 aiemE | saad LY ee<br>C ibo<br>TA = -55°C | 7 Til BSS<br>ie sally ae Pt TY<br>0.6 PattieaTatteeee | TTT | S|“<br>oT TA = 25°C = [rua] | Pall TTT TTT 10 Ies ee ee a eeUIT Cobo<br>TA = 85°C a<br>0.4 TTIae SIL EU ReeaH<br>amin | GeGO OG eeOO OOO GOO<br>TINE<br>TA = 150°C<br>0.2 HLA LEIIE ETTT 1 cC o on CeeCh Co<br>1 10 100 1,000 10,000 0.1 1 10 100<br>-IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 5 Typical Base-Emitter Saturation Voltage Figure 6 Typical Capacitance Characteristics<br>vs. Collector Current<br>1,000 a CS CO CO<br>aeeee ee<br>a aaQe sOCC GG<br>esQs<br>eee<br>100<br>aa a a<br>a aSOa CS C O (SSC(SS (<br>a Qe QC<br>sees<br>10 |] Tt ttt<br>a ee ee ee ee ee a<br>_a Qe QO GO<br>a CG<br>V CE  = -10V | {| | [| COff | ff<br>f = 100MHz<br>1<br>Pt tt [ttt]<br>0 10 20 30 40 50 60 70 80 90 100<br>-IC, COLLECTOR CURRENT (mA)<br>Figure 7 Typical Gain-Bandwidth Product<br>vs. Collector Current<br>BE(ON)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>-V<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION<br>-V<br>CAPACITANCE (pF)<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>-V<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 

**ZXTP5240F** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [26 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>2 L L1 ——— G  1.78  2.05  1.83<br>H  2.80 3.00 2.90<br>J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>C B K1  0.903 1.10 1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>fam a<br>M  0.085 0.150 0.110<br>to ———<br>D a  0°  8°  --<br>a All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

**==> picture [136 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 oa C<br>gg<br>Poo X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



6 of 7 **www.diodes.com** 

ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 

**ZXTP5240F** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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ZXTP5240F Document number: DS39609 Rev. 2 - 2 

April 2018 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/zxtp5240f-7/transistor-pnp-40v-2a-sot-23/dp/3577031)
---

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