# Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 1.25 W, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1251225/)

**URL**: https://novapart.co/products/ZXTP25060BFH/bipolar-bjt-single-transistor-pnp-60-v-3-a-125-w
**SKU**: ZXTP25060BFH
**Manufacturer**: DIODES INC.
**Price**: €0.2850
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:250MHz; Power Dissipation Pd:1.25W; DC Collector Current:3A; DC Current Gain hFE:200hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 250MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1251225/)

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXTP25060BFH** 

**60V PNP MEDIUM POWER TRANSISTOR IN SOT23** 

## **Features and Benefits** 

## **Mechanical Data** 

- BVCEO > -60V Breakdown Voltage 

- 100V forward blocking voltage 

- IC = -3A Continuous Collector Current, 

- ICM = -9A Peak Pulse Current, 

- Low saturation voltage, VCE(sat) < -85mV @ -1A 

- RCE(sat) = 58 mΩ for a low equivalent on-resistance 

   - Case: SOT23 

   - Case material: molded Plastic. “Green” molding Compound. 

   - UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish 

   - Weight: 0.008 grams (Approximate) 

- 1.25W power dissipation using SuperSOT package 

- Complementary part number ZXTN25060BFH 

## **Applications** 

- **Lead Free, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free, Green Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- MOSFET drivers 

- Power switches 

- Motor control 

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C<br>SOT23<br>B<br>E<br>Device Symbol<br>**----- End of picture text -----**<br>


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C<br>B E<br>Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Product**|**Case**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|ZXTP25060BFHTA|SOT23|7|8mm|3000|



Notes: 1. No purposefully added lead. 

2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com 

3. For packaging details, go to our website at http://www.diodes.com/ 

## **Marking Information** 

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**----- Start of picture text -----**<br>
028<br>**----- End of picture text -----**<br>


028 = Product Type Marking Code 

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ZXTP25060BFH Document number: DS33374  Rev. 4 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXTP25060BFH** ~~J~~ 

**Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-100|V|
|Collector-Emitter Voltage(forward blocking)|VCEX|-100|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Collector Voltage(reverse blocking)|VECO|-7|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-3|A|
|Peakpulse Current|ICM|-9|A|



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear derating factor|(Note 4)|PD|0.73<br>5.84|W|
||(Note 5)||1.05<br>8.4||
||(Note 6)||1.25<br>9.6||
||(Note 7)||1.81<br>14.5||
|Thermal Resistance, Junction to Ambient|(Note 4)|RθJA|171|°C/W|
||(Note 5)||119||
||(Note 6)||100||
||(Note 7)||69||
|Thermal Resistance,Junction to Lead|(Note 8)|RθJL|74.95|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



- Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

   5. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper. 

   6. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper. 

   7. Same as note (6), except the device is measured at t<5secs. 

   8. Thermal resistance from junction to solder-point (at the end of the collector lead). 

2 of 7 **www.diodes.com** 

ZXTP25060BFH Document number: DS33374  Rev. 4 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTP25060BFH** 

## **Thermal Characteristics** 

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1oz<br>15 X 15 mm FR4 PCB PS SX]<br>**----- End of picture text -----**<br>


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ZXTP25060BFH Document number: DS33374  Rev. 4 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **ZXTP25060BFH** [ 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO<br>~~ee~~|-100<br>~~ee~~|-120|-|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage (forward blocking)<br>~~es~~|BVCEX<br>~~es~~<br>~~ee~~|-100<br>~~es~~<br>~~ee~~|-120<br>~~es~~<br>~~QO~~|-<br>~~es~~<br>~~QO~~|V<br>~~es~~<br>~~GO~~|IC= -100 µA,<br>RBE< 1kΩ or -0.25V < VBE< 1V<br>~~es~~<br>~~OO~~|
|Collector-Emitter Breakdown Voltage(base open) (Note 9)<br>~~GG~~|BVCEO<br>~~ee~~<br>~~GG~~|-60<br>~~ee~~<br>~~GG~~|-80<br>~~GG~~<br>~~QO~~|-<br>~~GG~~<br>~~QO~~|V<br>~~GG~~<br>~~GO~~|IC= -10mA<br>~~GG~~<br>~~OO~~|
|Emitter- Collector Breakdown Voltage<br>(Reverse blocking) (Note 9)<br>~~ee~~|BVECO<br>~~ee~~|-7<br>~~ee~~|-8.6<br>~~QO~~<br>~~ee~~<br>~~GO~~|-<br>~~QO~~<br>~~ee~~<br>~~GO~~|V<br>~~GO ~~<br>~~ee~~<br>~~GOO~~|IE= -100µA<br> ~~OO~~<br>~~ee~~<br>~~GOO~~|
|Emitter-Base Breakdown Voltage<br>~~GG~~|BVEBO<br>~~GG~~|-7<br>~~GG~~|-8.1<br>~~GG~~<br>~~GO~~|-<br>~~GG~~<br>~~GO~~|V<br>~~GG~~<br>~~GOO~~|IE= -100µA<br>~~GG~~<br>~~GOO~~|
|Collector Cutoff Current<br>~~ee~~|ICBO<br>~~ee~~<br>~~ee~~|-<br>-<br>~~ee~~<br>~~ee~~|< -1<br>-<br>~~GO~~<br>~~ee~~|-50<br>-20<br>~~GO ~~<br>~~ee~~|nA<br>µA<br> ~~GOO~~<br>~~ee~~|VCB= -80V<br>VCB= -80V, TA= 100°C<br>~~GOO~~<br>~~ee~~|
|Collector emitter Cutoff Current<br>~~es~~|ICEX<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~GO~~|-100<br>~~es~~<br>~~GO~~|nA<br>~~es~~<br>~~GOO~~|VCE= -80V,<br>RBE< 1kΩ or -0.25V < VBE< 1V<br>~~es~~<br>~~GOO~~|
|Emitter Cutoff Current<br>~~GG~~|IEBO<br>~~ee~~<br>~~GG~~|-<br>~~ee~~<br>~~GG~~|< -1<br>~~GG~~<br>~~GO~~|-50<br>~~GG~~<br>~~GO~~<br>~~|~~|nA<br>~~GG~~<br>~~GOO~~<br>~~| |~~|VEB= -6V<br>~~GG~~<br>~~GOO~~<br>~~|~~|
|Static Forward Current Transfer Ratio (Note 9)<br>~~tt~~|hFE<br>~~tt~~|100<br>75<br>30<br>~~tt~~|200<br>150<br>60<br>~~GO~~<br>~~tt~~|300<br>-<br>-<br>~~GO ~~<br>~~tt~~<br>~~|~~|-<br> ~~GOO~~<br>~~tt~~<br>~~| |~~|IC= -10mA, VCE= -2V<br>IC= -1A, VCE= -2V<br>IC= -3A, VCE= -2V<br>~~GOO~~<br>~~tt~~<br>~~|~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~tt~~|VBE(sat)<br>~~tt~~|-<br>~~tt~~|-940<br>~~tt~~|-1040<br>~~tt~~<br>~~|~~|mV<br>~~tt~~<br>~~| |~~|IC= -3A, IB= -300mA<br>~~tt~~<br>~~|~~|
|Base-Emitter turn-on Voltage(Note 9)|VBE(on)|-|-830|-930<br>~~|~~|mV<br>~~| |~~|IC= -3A, VCE= -2V<br>~~|~~|
|Collector-Emitter Saturation Voltage (Note 9)|VCE(sat)|-<br>-<br>-<br>-|-45<br>-100<br>-70<br>-175|-55<br>-135<br>-85<br>-235<br>~~|~~|mV<br>~~| |~~|IC= -0.5A, IB= -50mA<br>IC= -0.5A, IB= -10mA<br>IC= -1A, IB= -100mA<br>IC= -3A, IB= -300mA<br>~~|~~|
|Transition Frequency<br>~~ee~~|fT<br>~~ee~~|-<br>~~ee~~|250<br>~~ee~~<br>~~GO~~|-<br>~~ee~~<br>~~GO~~|MHz<br>~~ee~~<br>~~G~~|IC= -100mA, VCE= -5V,<br>f = 100MHz<br>~~ee~~<br>~~GO~~|
|Collector Output Capacitance(Note 9)<br>~~GG~~|COBO<br>~~GG~~<br>~~ee~~|-<br>~~GG~~<br>~~ee~~|17.6<br>~~GG~~<br>~~GO~~<br>~~ee~~|30<br>~~GG~~<br>~~GO~~<br>~~ee~~|pF<br>~~GG~~<br>~~G~~<br>~~ee~~|VCB= -10V, f = 1MHz<br>~~GG~~<br>~~GO~~|
|Turn-on time<br>~~ee~~|t(on)<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|26.5<br>~~GO~~<br>~~ee~~<br>~~ee~~|-<br>~~GO ~~<br>~~ee~~<br>~~ee~~|ns<br> ~~G~~<br>~~ee~~<br>~~ee~~|VCC= -10V, IC= -500mA,<br>IB1= IB2= -50mA<br>~~GO~~<br>~~ee~~|
|Turn-off time<br>~~ee~~|t(off)<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|291<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||



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ZXTP25060BFH Document number: DS33374  Rev. 4 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTP25060BFH** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
1 0.4<br>Amn Tamb=25°CI C /I B =100 4 0.3 I C /I B =10 aa ill<br>OenV Al) a a7 [AN] TN<br>100m<br>SE 0.2 icon<br>150°C<br>I C /I B =50<br>Sotto if<br>100°C<br>SSeTee NA I C /I B =20 0.1 | eePw 25°C All<br>10m IC/IB=10 -55°C<br>a rm EEE 0.0 eei<br>1m 10m 100m 1 10 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>360<br>1.6 V CE =2V 320 1.0 IC/IB=10<br>150°C<br>1.4 Sreeat ENSer ae 280 -55 ° C 1LA 25°C<br>1.2 rhs 100°C  ATEnt 240 0.8 | en iO2ll<br>1.0 200<br>0.8 25°C 160<br>0.6 150°C<br>0.6 HH 120 anaes ile<br>TT a a ill |<br>0.4 || -55°C ee | 80 . eee call 100°C<br>0.2 SE 40 0.4 TT TIE IN TTT)<br>|| ee a ot<br>0.0 Ett Ht 0 TTT | LI TIE TE<br>1m 10m 100m 1 10 1m 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.2<br>V =2V<br>CE<br>1.0 Se nf<br>LT TTI TINE Ta<br>-55°C 25°C<br>0.8 pe ee Hp.<br>aE aZHll<br>ace<br>0.6<br>att SS Zl<br>150°C<br>TE eeAullll<br>0.4 100 ° C<br>ee<br>Pee | LT 1 mill<br>1m 10m 100m 1 10<br>- IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>- V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


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ZXTP25060BFH Document number: DS33374  Rev. 4 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXTP25060BFH** ~~>}~~ 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
A<br>SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B C B  1.20 1.40 1.30<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45 0.60 0.535<br>H EEE G 1.78 2.05 1.83<br>wel as<br>H  2.80 3.00 2.90<br>K M J 0.013 0.10 0.05<br>K1<br>K  0.903 1.10  1.00<br>D K1  -  -  0.400<br>J F G L L  0.45 0.61  0.55<br>M  0.085 0.18 0.11<br>α 0°  8°  -<br>G Q Fee All Dimensions in mm  E<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Y<br>Z<br>faint C<br>X E<br>| GIm4EP<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>Z  2.9<br>X  0.8<br>Y  0.9<br>C  2.0<br>E  1.35<br>**----- End of picture text -----**<br>


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ZXTP25060BFH Document number: DS33374  Rev. 4 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXTP25060BFH** ~~J~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtp25060bfh/transistor-pnp-sot-23/dp/1251225)
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