# Bipolar (BJT) Single Transistor, PNP, 20 V, 4 A, 1.81 W, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943438RL/)

**URL**: https://novapart.co/products/ZXTP25020CFHTA/bipolar-bjt-single-transistor-pnp-20-v-4-a-181-w
**SKU**: ZXTP25020CFHTA
**Manufacturer**: DIODES INC.
**Price**: €0.2140
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.81W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 285MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 140hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943438RL/)

**ZXTP25020CFH** 

> **20V PNP LOW POWER TRANSISTOR IN SOT23** ~~|~~ 

## **Features** 

## **Mechanical Data** 

- BVCEO > -20V 

- BVECO > -7V 

- IC = -4A Continuous Collector Current 

- VCE(sat) < -55mV @ -1A 

- RCE(sat) = 34mΩ 

- High Peak Current 

- Complementary Part Number ZXTN25020CFH 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.008 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- MOSFET and IGBT Gate Driving 

- DC-DC Converters 

|||||**SOT23**||||
|---|---|---|---|---|---|---|---|
|@|||**B**|**C**<br>**E**<br>~~©~~|||||
|Top View||||Device Symbol|Top View<br>Pin-Out|||
|**Ordering Information**(Note 4)||(Note 4)||||||
|||||||||
|**Product**||**Marking**||**Reel size(inches)**|**Tape width(mm)**||**Quantity per reel**|
|ZXTP25020CFHTA||1B2||7|8||3,000|



## **Ordering Information** (Note 4) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [194 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
1B2  1G5 1B2 = Product Type Marking Code<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

September 2015 © Diodes Incorporated 

**ZXTP25020CFH** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-25|V|
|Collector-Emitter Voltage(Forward Blocking)|VCEO|-20|V|
|Emitter-collector voltage(Reverse Blocking)|VECO|-7|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current(Note 5)|IC|-4|A|
|Base Current|IB|-1|A|
|Peak Pulse  Current|ICM|-10|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear derating factor|(Note 5)|PD|0.73<br>5.84|W|
||(Note 6)||1.05<br>8.4||
||(Note 7)||1.25<br>9.6||
||(Note 8)||1.81<br>14.5||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|171|°C/W|
||(Note 6)||119||
||(Note 7)||100||
||(Note 8)||69||
|Thermal Resistance,Junction to Lead|(Note 9)|RθJL|74.95|°C/W|
|Operatingand Storage Temperature Range|—|TJ,TSTG|-55 to +150|°C|



- Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

   6. Same as note (5), except the device is surface mounted on 25mm x 25mm with 2 oz copper. 

   7. Same as note (5), except the device is surface mounted on 50mm x 50mm with 2 oz copper. 

   8. Same as note (7), except the device is measured at t<5secs. 

   9. Thermal resistance from junction to solder-point (at the end of the collector lead). 

## **ESD Ratings** (Note 10) 

|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge- Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Note: 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

September 2015 © Diodes Incorporated 

**ZXTP25020CFH** | 

## **Thermal Characteristics and Derating Information** 

**==> picture [457 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4<br>V 50mm x 50mm 2oz<br>10 Limited CE(sat) 1.2 50mm x 50mm 2oz<br>1.0<br>25mm x 25mm 2oz<br>1 0.8<br>DC<br>0.6<br>1s<br>100m 100ms 0.4<br>10ms 15mm x 15mm 1oz<br>Single Pulse 1ms 0.2<br>T =25°C<br>amb 100µs<br>10m ci 0.0 P| | tT | | UR A<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>100<br>Tamb=25°C 100 Single Pulse<br>50mm x 50mm 2oz Tamb=25°C<br>80 The) «|=  6h l<br>50mm x 50mm 2oz<br>60 D=0.5<br>ae 10 aa Mamta<br>40 ETAT =|<br>D=0.2 BIB ante Single Pulse cere<br>20 ee mellll D=0.05 CCE CFTPSCCECE<br>1<br>D=0.1<br>0 ieee Ti) =| CT<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

September 2015 © Diodes Incorporated 

**ZXTP25020CFH** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—————~~|**Symbol**<br>~~—————~~<br>~~a~~|**Min**<br>~~—————~~|**Typ**<br>~~—————~~|**Max**<br>~~—————~~|**Unit**<br>~~—————~~|**Test Condition**<br>~~—————~~|
|Collector-Base Breakdown Voltage<br>~~—————~~|BVCBO<br>~~—————~~<br>~~a~~|-25<br>~~—————~~|-50<br>~~—————~~|—<br>~~—————~~|V<br>~~—————~~|IC= -100µA<br>~~—————~~|
|Collector-Emitter Breakdown Voltage(Note 11)<br>~~—————~~|BVCEO<br>~~—————~~<br>~~a~~|-20<br>~~—————~~|-35<br>~~—————~~|—<br>~~—————~~|V<br>~~—————~~|IC= -10mA<br>~~—————~~|
|Emitter-Base Breakdown Voltage<br>~~—_————~~|BVEBO<br>~~a~~<br>~~—_————~~|-7<br>~~—_————~~|-8.2<br>~~—_————~~|—<br>~~—_————~~|V<br>~~—_————~~|IE= -100µA<br>~~—_————~~|
|Emitter-Base Breakdown Voltage<br>~~—_————~~|BVECO<br>~~—_————~~|-7<br>~~—_————~~|-8.8<br>~~—_————~~|—<br>~~—_————~~|V<br>~~—_————~~|IE= -100µA<br>~~—_————~~|
|Collector-Base Cutoff Current<br>~~i=.~~|ICBO<br>~~=.~~|—<br>|< -1<br>|-50<br>|nA<br>|VCB= -20V<br>|
|||—<br>~~=.~~|—<br>~~=.~~|-20<br>~~=.~~|µA<br>~~=. ——~~|VCB= -20V,Tamb= +100°C<br>~~——~~|
|Emitter-Base Cutoff Current<br>~~=.~~|IEBO<br>~~=.~~|—<br>~~=.~~|< -1<br>~~=.~~|-50<br>~~=.~~|nA<br>~~=. ——~~|VEB= -5.6V<br>~~——~~|
|Static Forward Current Transfer Ratio (Note 11)<br>~~=.~~|hFE<br>~~=.~~<br>~~a~~|200<br>~~=.~~|350<br>~~=.~~|500<br>~~=.~~|—<br>~~=. ——~~<br>~~==-2——~~|IC= -10mA,VCE= -2V<br>~~——~~|
|||—<br>~~=.~~|250<br>~~=.~~|—<br>~~=.~~||IC= -1A,VCE= -2V<br>~~——~~|
|||—<br>~~=.~~<br>~~a~~<br>~~==-2——~~|140<br>~~=.~~<br>~~ee~~<br>~~==-2——~~|—<br>~~=.~~<br>~~==-2——~~||IC= -4A,VCE= -2V<br>~~——~~<br>~~eee~~<br>~~==-2——~~|
|||—<br>~~=.~~<br>~~a~~<br>~~==-2——~~|40<br>~~=.~~<br>~~ee~~<br>~~==-2——~~|—<br>~~=.~~<br>~~==-2——~~||IC= -10A, VCE= -2V<br>~~——~~<br>~~eee~~<br>~~==-2——~~|
|Collector-Emitter Saturation Voltage (Note 11)<br>~~=.~~<br>~~a~~|VCE(sat)<br>~~=.~~<br>~~a~~<br>~~a~~|—<br>~~=.~~<br>~~a~~<br>~~a~~<br>~~==-2——~~|-43<br>~~=.~~<br>~~ee~~<br>~~a~~<br>~~==-2——~~|-55<br>~~=.~~<br>~~a~~<br>~~==-2——~~|mV<br>~~=. ——~~<br>~~a~~<br>~~==-2——~~|IC= -1A,IB= -100mA<br>~~——~~<br>~~eee~~<br>~~a~~<br>~~==-2——~~|
|||—<br>~~=.~~<br>~~a~~<br>~~==-2——~~|-70<br>~~=.~~<br>~~a~~<br>~~==-2——~~|-100<br>~~=.~~<br>~~a~~<br>~~==-2——~~||IC= -1A,IB= -20mA<br>~~——~~<br>~~a~~<br>~~==-2——~~|
|||—<br>~~a~~<br>~~==-2——~~<br>~~a~~|-120<br>~~a~~<br>~~==-2——~~<br>~~ee~~|-170<br>~~a~~<br>~~==-2——~~||IC= -2A,IB= -40mA<br>~~a~~<br>~~==-2——~~<br>~~Pr~~|
|||—<br>~~a~~<br>~~==-2——~~<br>~~a~~|-150<br>~~a~~<br>~~==-2——~~<br>~~ee~~|-210<br>~~a~~<br>~~==-2——~~||IC= -4A,IB= -200mA<br>~~a~~<br>~~==-2——~~<br>~~Pr~~|
|Base-Emitter Saturation Voltage(Note 11)<br>~~Cf~~|VBE(sat)<br>~~a~~<br>~~Cf~~<br>~~a~~|—<br>~~==-2——~~<br>~~a~~<br>~~Cf~~<br>~~a~~|-930<br>~~==-2——~~<br>~~ee~~<br>~~Cf~~<br>~~a~~|-1050<br>~~==-2——~~<br>~~Cf~~|mV<br>~~==-2——~~<br>~~Cf~~|IC= -4A,IB= -200mA<br>~~==-2——~~<br>~~Pr~~<br>~~Cf~~|
|Base-Emitter Saturation Voltage(Note 11)<br>~~a~~|VBE(on)<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~==-2——~~<br>~~a~~<br>~~a~~|-810<br>~~==-2——~~<br>~~a~~<br>~~a~~|-900<br>~~==-2——~~<br>~~a~~|mV<br>~~==-2——~~<br>~~a~~|IC= -4A,VCE= -2V<br>~~==-2——~~<br>~~a~~|
|Output Capacitance<br>~~a~~|Cobo<br>~~a ~~<br>~~a~~<br>~~a~~|—<br> ~~==-2——~~<br>~~a~~<br>~~a~~|32.4<br>~~==-2——~~<br>~~a~~<br>~~a~~|40<br>~~==-2——~~<br>~~a~~|pF<br>~~==-2——~~<br>~~a~~|VCB= -10V,f = 1MHz<br>~~==-2——~~<br>~~a~~|
|Transition Frequency<br>~~[LL~~|fT<br>~~a~~<br>~~[LL~~|—<br>~~a~~<br>~~[LL~~|285<br>~~a~~<br>~~[LL~~|—<br>~~[LL~~|MHz<br>~~[LL~~|VCE= -10V, IC= -50mA,<br>f = 100MHz<br>~~[LL~~|
|DelayTime<br>~~eS~~|t(d)<br>~~eS~~|—<br>~~eS~~|38.4<br>~~eS~~|—<br>~~eS~~|nS<br>~~eS~~|VCC= -15V, IC= -750mA,<br>IB1= -IB2= -15mA<br>~~eS~~|
|Rise Time<br>~~eS~~|t(r)<br>~~eS~~<br>~~a~~|—<br>~~eS~~|49.2<br>~~eS~~|—<br>~~eS~~|nS<br>~~eS~~||
|Storage Time<br>~~eS~~<br>~~a~~|t(s)<br>~~eS~~<br>~~a~~<br>~~a~~|—<br>~~eS~~<br>~~a~~|168<br>~~eS~~<br>~~a~~|—<br>~~eS~~<br>~~a~~|nS<br>~~eS~~<br>~~a~~||
|Fall Time<br>~~eS~~<br>~~a~~|t(f)<br>~~eS~~<br>~~a~~<br>~~a~~|—<br>~~eS~~<br>~~a~~|55<br>~~eS~~<br>~~a~~|—<br>~~eS~~<br>~~a~~|nS<br>~~eS~~<br>~~a~~||



4 of 7 **www.diodes.com** 

ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

September 2015 © Diodes Incorporated 

**ZXTP25020CFH** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [447 x 557] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.6<br>Tamb=25°C I /I =10<br>Sait emeaeiii eee ar i 0.5 C B Co CoAn<br>I /I =100 ET<br>100m ST C B iy 0.4 |<br>0.3<br>I /I =50<br>C B<br>iii all SE EE 150°C<br>10m 0.2<br>I /I =20<br>C B 100°C<br>25°C<br>rT Tt UT TTT I /I =10 i 0.1 ra<br>Pt TT TT C B LI UTHI PT TTI TTT TT TA -55°C<br>1m PE THAI ETI if 0.0 ee | | TT<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.6 150°C V CE =2V 600550 1.2 I C /I B =10<br>ent EY<br>1.4 FNN 100°C CS etI 500450 1.0 -55°C 0| 25°C ine &<br>1.2 a 400 i | CO<br>FiCT TTTTESNOUINUIE TTT eT h<br>1.0 HH EPS EE 350 TS er<br>0.8 25°C 300 0.8<br>SAM DrierSNei 250 pa|<br>0.6 CHETNNNCCH 200 0.6 eepeaila |<0eA, 150°C ia<br>0.4 -55°C SOOT 150 a ee ee 100°C im<br>100<br>0.2 ee oe 50 0.4 oe<br>0.0 Err SS 0 a<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.2<br>V =2V<br>CE<br>1.0 ER EHH TG<br>-55°C 25°C<br>0.8 Fy PLA TITIE FUTPEAT<br>WS ii eer<br>errr | reree<br>0.6<br>ai OT Pcl<br>150°C<br>SS<br>0.4 100°C<br>Ty<br>ee ee AIL|<br>0.2 Ne<br>1m 10m 100m 1 10<br>- IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>- V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


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ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

September 2015 © Diodes Incorporated 

**ZXTP25020CFH** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [492 x 281] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>J 0.25 Dim  Min  Max  Typ<br>K1 K A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>a C  2.30 2.50 2.40<br>A M D  0.89  1.03  0.915<br>ee IS L oS L1 EEE F  0.45  0.60  0.535<br>ica i [=][=][===] G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>- oo a K  0.890  1.00  0.975<br>C B<br>K1  0.903  1.10  1.025<br>= L  0.45  0.61  0.55<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>D ot a 8°<br>F G All Dimensions in mm<br>i= _ |<br>Suggested Pad Layout<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>**----- End of picture text -----**<br>


**SOT23** 

**==> picture [175 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z<br>aT C<br>X E<br>LERab Ey<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

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**ZXTP25020CFH** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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ZXTP25020CFH Document Number: DS33748 Rev. 4 - 2 

September 2015 © Diodes Incorporated 



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