# Bipolar (BJT) Single Transistor, PNP, 40 V, 1 A, 350 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1251229/)

**URL**: https://novapart.co/products/ZXTP2041F/bipolar-bjt-single-transistor-pnp-40-v-1-a-350-mw
**SKU**: ZXTP2041F
**Manufacturer**: DIODES INC.
**Price**: €0.1150
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:150MHz; Power Dissipation Pd:350mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 150MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 300hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1251229/)

DIODES, 

**A Product Line of Diodes Incorporated** 

## **ZXTP2041F** 

## **40V PNP MEDIUM POWER TRANSISTOR IN SOT23** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -40V 

- IC = -1A High Continuous Current 

- ICM = -2A Peak Pulse Current 

- Low Saturation Voltage VCE(sat) < -500mV @ -1A 

- RSAT = 350mΩ for a Low Equivalent On-resistance 

- Complementary NPN type: ZXTN2040F 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.008 grams (approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Application** 

- Power MOSFET gate driving 

 Low loss power switching 

**==> picture [480 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|SOT23|C|
|E|
|B|C|
|B|
|E|
|~e|O|s]|
|Top View|Device symbol|Top View|
|Pin-Out|
|g Information Information|(Note 4)|
|Product|Marking|Reel size (inches)|Tape width (mm)|Quantity|per reel|
|ZXTP2041FTA|P41|7|8|3,000|

**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

**==> picture [184 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
P41 P41 = Product Type Marking Code<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

ZXTP2041F Datasheet Number: DS33721 Rev. 7 - 2 

December 2013 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## DIODES 

## **ZXTP2041F** ~~a~~ 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

**==> picture [495 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-40|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-1|A|
|Peak Pulse Current|ICM|-2|A|
|Base Current|IB|-200|mA|
|Peak Base Current|IBM|-1|A|

**----- End of picture text -----**<br>


## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [495 x 70] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|(Note 5)|310|
|Power Dissipation|PD|mW|
|(Note 6)|350|
|Thermal Resistance, Junction to Ambient|((Note 5Note 6))|RθJA|403 357|C/W|
|Thermal Resistance, Junction to Leads|(Note 7)|RθJL|350|C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|C|

**----- End of picture text -----**<br>


## **ESD Ratings** (Note 8) 

**==> picture [516 x 29] intentionally omitted <==**

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|JEDEC Class|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|

**----- End of picture text -----**<br>


- Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper. 

   7. Thermal resistance from junction to solder-point (at the end of the leads). 

   8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

ZXTP2041F Datasheet Number: DS33721 Rev. 7 - 2 

December 2013 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTP2041F** 

## DIODES. 

## **Thermal Characteristics and Derating Information** 

**==> picture [203 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4<br>Pt} |] ttt yt<br>0.3<br>ANSE<br>PN]<br>0.2 PTT<br>r | |] TITtt |NEEEELLLI N L<br>0.1 BERR<br>PTT Te eT EINESSCEEH<br>0.0 SRR eANG \<br>0 25 50 75 100 125 150<br> Temperature (°C)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Derating Curve** 

**==> picture [221 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>350 a a a | |<br>300<br>AEue all<br>250 io fl<br>D=0.5<br>200 FRET<br>150 eeSS D=0.1 eeAny) A |<br>EHTS IIASA<br>100 D=0.2 fl y TW Single Pulse<br>E 500 auOTe|aeerHOMESITEeal TTaneIILSH |  I N D=0.05 ollaTaTWY TT||<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

**==> picture [220 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ROT Single Pulse. Tamb=25°C iT<br>PNOETUTIT TPTPPT<br>PONT PTT TTT TTT PTT<br>LPN TT TATTT<br>1 SIN TTT<br>eeSeaeiillCTeeet i, etlSSTeeeOT<br>PTTTIC<br>0.1 Bn<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Pulse Power Dissipation** 

3 of 7 **www.diodes.com** 

ZXTP2041F Datasheet Number: DS33721 Rev. 7 - 2 

December 2013 © Diodes Incorporated 

**A Product Line of** LILES. **Diodes Incorporated** | ZETEX **ZXTP2041F** ~~ee~~ 

## LILES. 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ. **|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage||BVCBO|-40|-|-|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage(Note 9)||BVCEO|-40|-|-|V|IC= -10mA|
|Emitter-Base Breakdown Voltage||BVEBO|-7|-|-|V|IE= -100µA|
|Collector Cutoff Current||ICBO|-|-|-100|nA|VCB= -30V|
|Emitter Cutoff Current||IEBO|-|-|-100|nA|VEB= -5.6V|
|Emitter Cutoff Current<br>~~a~~||ICES|-|-<br>~~=_~~|-100<br>~~=_ i~~|nA<br>~~i~~|VCE= -30V<br>~~i~~|
|DC current transfer Static ratio (Note 9)<br>~~=~~<br>~~a~~||hFE<br>~~=~~|300<br>~~=~~|-<br>~~=~~<br>~~=_~~|-<br>~~=~~<br>~~=_ i~~|-<br>~~=~~<br>~~i~~|IC= -1mA,VCE= -5V<br>~~=~~<br>~~i~~|
||||300<br>~~=~~|-<br>~~=~~<br>~~=_~~|800<br>~~=~~<br>~~=_ i~~||IC= -100mA,VCE= -5V<br>~~=~~<br>~~i~~|
||||250<br>~~=~~|-<br>~~=~~<br>~~=_~~|-<br>~~=~~<br>~~=_ i~~||IC= -500mA,VCE= -5V<br>~~=~~<br>~~i~~|
||||160<br>~~=~~|-<br>~~=~~<br>~~=_~~|-<br>~~=~~<br>~~=_ i~~||IC= -1A,VCE= -5V<br>~~=~~<br>~~i~~|
||||30<br>~~=~~|-<br>~~=~~<br>~~=_~~|-<br>~~=~~<br>~~=_ i~~||IC= -2A,VCE= -5V<br>~~=~~<br>~~i~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~=~~<br>~~a~~||VCE(sat)<br>~~=~~<br>~~eS~~|-<br>~~=~~<br>~~eS~~|-<br>~~=~~<br>~~=_~~<br>~~eS~~|-200<br>~~=~~<br>~~=_ i~~<br>~~eS~~|mV<br>~~=~~<br>~~i~~<br>~~eS~~|IC= -100mA,IB= -1mA<br>~~=~~<br>~~i~~<br>~~eS~~|
||||-<br>~~eS~~|-<br>~~=_~~<br>~~eS~~|-350<br>~~=_ i~~<br>~~eS~~||IC= -500mA,IB= -20mA<br>~~i~~<br>~~eS~~|
||||-<br>~~eS~~|-<br>~~=_~~<br>~~eS~~|-500<br>~~=_ i~~<br>~~eS~~||IC= -1A,IB= -100mA<br>~~i~~<br>~~eS~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~a~~||VBE(sat)<br>~~eS~~|-<br>~~eS~~|-<br>~~=_~~<br>~~eS~~|-1.1<br>~~=_ i~~<br>~~eS~~|V<br>~~i~~<br>~~eS~~|IC= -1A,IB = -100mA<br>~~i~~<br>~~eS~~|
|Base-Emitter Turn-on Voltage(Note 9)<br>~~SS~~||VBE(on)<br>~~SS~~|-|-<br>~~EE~~|-1.0<br>~~EE~~|V<br>~~EE~~|IC= -1A,VCE= -5V|
|Transitional Frequency<br>~~SS~~||fT<br>~~SS~~|150|300<br>~~EE~~|-<br>~~EE~~|MHz<br>~~EE~~|IC= -50mA, VCE= -10V,<br>f = 100MHz|
|Output capacitance<br>~~SS~~<br>~~SSS~~||Cobo<br>~~SS~~<br>~~Sim~~|-<br>~~Sim~~|-<br>~~EE~~<br>~~Sim~~|10<br>~~EE~~<br>~~Sim~~|pF<br>~~EE~~<br>~~Sim~~|VCB = -10V,f = 1MHz,<br>~~Sim~~|
|Switching Time<br>~~SSS~~|DelayTime<br>~~SSS~~|t(d)<br>~~Sim~~|-<br>~~Sim~~|34.9<br>~~Sim~~|-<br>~~Sim~~|ns<br>~~Sim~~|VCC = -10V, IC= -500mA,<br>IB1= -IB2=-25mA<br>~~Sim~~|
||Rise Time<br>~~SSS~~|t(r)<br>~~Sim~~|-<br>~~Sim~~|19.2<br>~~Sim~~|-<br>~~Sim~~|||
||Storage Time<br>~~SSS~~|t(s)<br>~~Sim~~|-<br>~~Sim~~|249<br>~~Sim~~|-<br>~~Sim~~|||
||Fall Time<br>~~SSS~~|t(f)<br>~~Sim~~|-<br>~~Sim~~|62<br>~~Sim~~|-<br>~~Sim~~|||



4 of 7 **www.diodes.com** 

ZXTP2041F Datasheet Number: DS33721 Rev. 7 - 2 

December 2013 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTP2041F** 

## DIODES. 

**Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

5 of 7 **www.diodes.com** 

ZXTP2041F 

December 2013 © Diodes Incorporated 

Datasheet Number: DS33721 Rev. 7 - 2 

**A Product Line of Diodes Incorporated** | **ZXTP2041F** [| 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [409 x 365] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>| yaee——— K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>. } | = M  0.085 0.150  0.110<br>ae ———— a 8°<br>All Dimensions in mm<br>ested Pad Layout yout out<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>Y<br>Dimensions Value (in mm)<br>Z  2.9<br>Z<br>[LE+ C X  0.8<br>Y  0.9<br>C  2.0<br>E  1.35<br>X E<br>WalonRab<br>All7°<br>H<br>J<br>K 1 K<br>a<br>A M<br>L L1<br>C B<br>D<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

6 of 7 **www.diodes.com** 

ZXTP2041F Datasheet Number: DS33721 Rev. 7 - 2 

December 2013 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ZETEX **ZXTP2041F** ~~[|~~ 

## ES 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com** 

7 of 7 **www.diodes.com** 

ZXTP2041F Datasheet Number: DS33721 Rev. 7 - 2 

December 2013 © Diodes Incorporated 



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