# Bipolar (BJT) Single Transistor, PNP, 60 V, 1 A, 350 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1251228RL/)

**URL**: https://novapart.co/products/ZXTP2039F/bipolar-bjt-single-transistor-pnp-60-v-1-a-350-mw
**SKU**: ZXTP2039F
**Manufacturer**: DIODES INC.
**Price**: €0.1330
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:350mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 150MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1251228RL/)

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## **ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor** 

## **Summary** 

V > -80V (BR)CEV V > -60V (BR)CEO I = -1A c(cont) Vce(sat) < -600mV @ -1A 

## **Complementary type** 

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ZXTN2038F 

## **Description** 

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. 

## **Features** 

- Low saturation voltage for reduced power dissipation 

- 1 to 2 amp high current capability 

- Pb-free 

- SOT23 package 

## **Applications** 

- Power MOSFET gate driving 

- Low loss power switching 

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## **Ordering information** 

|**Ordering information**|**Ordering information**|**Ordering information**|
|---|---|---|
|**Device marking**<br>**Device**<br>**Reel size**<br>**Tape width**<br>**Quantity per reel**<br>ZXTP2039FTA<br>7”<br>8mm<br>3,000<br>ZXTP2039FTC<br>13”<br>8mm<br>10,000<br>**Pin out - top view**|||
||||



P39 

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## **ZXTP2039F** 

## **Absolute maximum ratings** 

|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Collector-base voltage|VCBO|-80|V|
|Collector-emitter voltage|VCEV|-80|V|
|Collector-emitter voltage|VCEO|-60|V|
|Emitter-base voltage|VEBO|-5.0|V|
|Peak pulse current|ICM|-2|A|
|Continuous collector current*|IC|-1|A|
|Peak base current|IBM|-1|A|
|Power dissipation @ TA=25°C*|PD|350|mW|
|Operating and storage temperature|Tj:Tstg|-55 to +150|°C|



## **NOTES:** 

- For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

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**ZXTP2039F** 

## **Electrical characteristics (@TAMB = 25°C)** 

|**Parameter**|**Symbol**|**Min.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|
|Collector-base breakdown<br>voltage|V(BR)CBO|-80||V|IC=-100�A|
|Collector-emitter breakdown<br>voltage|V(BR)CEV|-80||V|IC=-1�A<br>-0.3V < VBE< 1V|
|Collector-emitter breakdown<br>voltage|V(BR)CEO|-60||V|IC=-10mA*|
|Emitter-base breakdown<br>voltage|V(BR)EBO|-5||V|IE=-100µA|
|Collector-emitter cut-off current|ICES||-100|nA|VCE=-60V|
|Collector-base cut-off current|ICBO||-100|nA|VCB=-60V|
|Emitter-base cut-off current|IEBO||-100|nA|VEB=-4V|
|Static forward current transfer<br>ratio|hFE|100<br>100<br>80<br>15|300||IC=-1mA, VCE=-5V<br>IC=-500mA, VCE=-5V*<br>IC=-1A, VCE=-5V*<br>IC=-2A, VCE=-5V*|
|Collector-emitter saturation<br>voltage|VCE(sat)||-0.2<br>-0.3<br>-0.6|V<br>V<br>V|IC=-100mA, IB=-2mA*<br>IC=-500mA, IB=-50mA*<br>IC=-1A, IB=-100mA*|
|Base-emitter saturation voltage|VBE(sat)||-1.2|V|IC=-1A, IB=-100mA*|
|Base-emitter turn-on voltage|VBE(on)||-1.0|V|IC=-1A, VCE=-5V*|
|Transition frequency|fT|150|||IC=-50mA, VCE=-10V<br>f=100MHz|
|Output capacitance|Cobo||10|pF|VCB=-10V, f=1MHz|



## **NOTES:** 

* Measured under pulsed conditions. Pulse width=300�S. Duty cycle �2% Spice parameter data is available upon request for this device 

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**ZXTP2039F** 

## **Typical characteristics** 

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**----- Start of picture text -----**<br>
0.6 0.6<br>+25 ° C IC/IB=10<br>0.5 0.5<br>0.4 0.4<br>0.3 0.3<br>IC/IB=10 -55 °C<br>+25 °C<br>IC/IB=50 +100 °C<br>0.2 0.2<br>0.1 0.1<br>0 0<br>1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A<br>IC-Collector Current IC-Collector Current<br>VCE(sat) v IC VCE(sat) v IC<br>400 VCE=5V IC/IB=10<br>1.0<br>300 +100 °C<br>0.8<br>200 +25 °C 0.6<br>-55 °C<br>+25 °C<br>0.4 +100 °C<br>100 -55 °C<br>0.2<br>0 0<br>1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A<br>IC-Collector Current IC-Collector Current<br>hFE V IC VBE(sat) v IC<br>1.2 10<br>VCE=5V<br>1.0<br>0.8 1<br>0.6<br>DC<br>1s<br>-55 °C 100ms<br>0.4 +25 °C 0.1 10ms<br>+100 °C 1ms<br>100us<br>0.2<br>0 0.01<br>1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V<br>IC-Collector Current VCE - Collector Emitter Voltage (V)<br>VBE(on) v IC Safe Operating Area<br>-(V) -(V)<br>CE(sat) CE(sat)<br>V V<br> - (V)<br>- Typical Gain BE(sat)<br> FE  V<br>h<br> - (V)<br>BE(on)<br>V<br>-Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>


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**ZXTP2039F** 

## **Packaging details - SOT23** 

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**----- Start of picture text -----**<br>
L<br>H<br>N<br>D G<br>3 leads<br>A<br>M B<br>C<br>K F<br>**----- End of picture text -----**<br>


## **Package dimensions** 

Dimensions in inches are control dimensions, dimensions in millimeters are approximate. 

|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min.**|**Max.**|**Min.**|**Max.**||**Min.**|**Max.**|**Max.**|**Max.**|
|A|2.67|3.05|0.105|0.120|H|0.33|0.51|0.013|0.020|
|B|1.20|1.40|0.047|0.055|K|0.01|0.10|0.0004|0.004|
|C|-|1.10|-|0.043|L|2.10|2.50|0.083|0.0985|
|D|0.37|0.53|0.015|0.021|M|0.45|0.64|0.018|0.025|
|F|0.085|0.15|0.0034|0.0059|N|0.95 Nom.||0.0375 Nom.||
|G|1.90 Nom.||0.075 Nom.||-|-|-|-|-|



|**Europe**|**Americas**|**Asia Pacific**|**Corporate Headquarters**|
|---|---|---|---|
|Zetex GmbH|Zetex Inc|Zetex (Asia Ltd)|Zetex Semiconductors plc|
|Streitfeldstraße 19|700 Veterans Memorial Highway|3701-04 Metroplaza Tower 1|Zetex Technology Park, Chadderton|
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|Germany|USA|Hong Kong|United Kingdom|
|Telefon: (49) 89 45 49 49 0|Telephone: (1) 631 360 2222|Telephone: (852) 26100 611|Telephone (44) 161 622 4444|
|Fax: (49) 89 45 49 49 49|Fax: (1) 631 360 8222|Fax: (852) 24250 494|Fax: (44) 161 622 4446|
|europe.sales@zetex.com|usa.sales@zetex.com|asia.sales@zetex.com|hq@zetex.com|



These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

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© Zetex Semiconductors plc 2005 



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- [View this product on Novapart](https://novapart.co/products/ZXTP2039F/bipolar-bjt-single-transistor-pnp-60-v-1-a-350-mw)
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