# Bipolar (BJT) Single Transistor, PNP, 80 V, 4.3 A, 1.5 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:1843774/)

**URL**: https://novapart.co/products/ZXTP2012ZTA/bipolar-bjt-single-transistor-pnp-80-v-43-a-15-w
**SKU**: ZXTP2012ZTA
**Manufacturer**: DIODES INC.
**Price**: €0.3940
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:120MHz; Power Dissipation Pd:1.5W; DC Collector Current:-4.3A; DC Current Gain hFE:250hFE; Transi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 120MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 250hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4.3A |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1843774/)

**Green** ~~©~~ 

**ZXTP2012Z** CT 

## **60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -60V 

- IC = -4.3A High Continuous Current 

- RSAT = 32mΩ for a Low Equivalent On-Resistance 

- Low Saturation Voltage VCE(SAT) < -65mV @ IC = -1A 

- hFE Specified Up to -10A for High Current Gain Hold Up 

- Complementary NPN Type: ZXTN2010Z 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

   - Case: SOT89 

   - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.05 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Application** 

- Emergency Lighting Circuits 

- Motor Driving (Including DC Fans) 

- Backlight Inverters 

- Power Switches 

- Gate Driving MOSFETs and IGBTs 

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SOT89<br>C<br>E<br>B C C<br>B<br>E<br>Top View<br>Top View  Device Symbol  Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|---|
|ZXTP2012ZTA|AEC-Q101|951|7|12|1,000|
|ZXTP2012Z-13R|AEC-Q101|951|13|12|4,000|
|ZXTP2012ZQTA|Automotive|951|7|12|1,000|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**==> picture [16 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
951<br>**----- End of picture text -----**<br>


951 = Product Type Marking Code 

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ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

September 2018 © Diodes Incorporated 

**ZXTP2012Z** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-100|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Base Current|IB|-2|A|
|Continuous Collector Current|IC|-4.3|A|
|Peak Pulse Current|ICM|-15|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 6)<br>Linear DeratingFactor|PD|1.5<br>12|W<br>mW/°C|
|Power Dissipation (Note 7)<br>Linear DeratingFactor|PD|2.1<br>16.8|W<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|83|C/W|
|Thermal Resistance,Junction to Ambient(Note 7)|RθJA|60|C/W|
|Thermal Resistance,Junction to Leads(Note 8)|RθJL|3.23|C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|C|



Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; device measured when operating in steady state condition. 

7. Same as note (6), except the device is mounted on 50mm x 50mm single sided 1oz weight copper. 

8. Thermal resistance from junction to solder-point (on the exposed collector pad). 

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ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

September 2018 © Diodes Incorporated 

**ZXTP2012Z** 

**Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
V<br>1 0 Limit CE(SAT) TTIa ee ee 2.0 ey— ee ee<br>50X50mm PCB<br>ae SSE ee Ss“ GEED ae Se ‘ee 1oz copper<br>iz | |) SC OK S/N ANT 1.5<br>1 DC<br>1s 1.0<br>100ms 25X25mm PCB<br>100 m 10ms 1oz copper<br>0.5<br>Single Pulse. TA=25 o C 1ms<br>25X25mm PCB  1oz copper 100s<br>10 m an  il 0.0 ee '<br>100m 1 10 100 0 20 40 60 80 100 120 140 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (oC)<br>Safe Operating Area Derating Curve<br>80<br>25X25mm PCB  1oz copper<br>Po TET a |<br>100 o<br>60 Single Pulse. TA=25 C<br>25X25mm PCB  1oz copper<br>Att TAME tTLITEAT LUTWUIbee” |  fy Za  7 aA —SeiiiestitiemaetHEH leEe|<br>D=0.5<br>40 man | a HET TTT SUE PUTA TTT<br>ant Y 10 ae<br>D=0.2 Single Pulse<br>20 cgi ett<br>D=0.05<br>mis eee ei Seti ett eeai<br>D=0.1<br>0 seamen 0((0 01 A 1 SEUI TAT atVTE teETI TAI CTI<br>100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>Thermal Resistance (<br> Max Power Dissipation (W)<br>C/W)<br>o<br>**----- End of picture text -----**<br>


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ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

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**ZXTP2012Z** 

|**Characteristic**<br>~~a~~|**Symbol**<br>~~a~~<br>~~ee~~|**Min**<br>~~a~~<br>~~ee~~|**Typ**<br>~~a~~|**Max**<br>~~a~~|**Unit**<br>~~a~~|**Test Condition**<br>~~a~~|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage<br>~~a~~<br>~~a~~|BVCBO<br>~~a~~<br>~~ee~~<br>~~a~~|-100<br>~~a~~<br>~~ee~~<br>~~a~~|-120<br>~~a~~<br>~~a~~|—<br>~~a~~|V<br>~~a~~|IC= -100µA<br>~~a~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~——~~<br>~~a~~|BVCER<br>~~ee~~<br>~~——~~<br>~~a~~|-100<br>~~ee~~<br>~~——~~<br>~~a~~|-120<br>~~——~~<br>~~a~~|—<br>~~——~~|V<br>~~——~~|IC= -1µA, RB≤1kΩ<br>~~——~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~——~~<br>~~a~~|BVCEO<br>~~——~~<br>~~a~~|-60<br>~~——~~<br>~~a~~|-80<br>~~——~~<br>~~a~~|—<br>~~——~~|V<br>~~——~~|IC= -10mA<br>~~——~~|
|Emitter-Base Breakdown Voltage<br>~~——~~<br>~~a~~|BVEBO<br>~~——~~<br>~~a~~|-7<br>~~——~~<br>~~a~~|-8.1<br>~~——~~<br>~~a~~|—<br>~~——~~|V<br>~~——~~|IE= -100µA<br>~~——~~|
|Collector Cutoff Current<br>~~a~~|ICBO<br>~~a ~~<br>~~ee~~|—<br> ~~a~~|< -1<br>—<br>~~a~~<br>~~eee~~|-20<br>-500<br>~~eee~~|nA<br>nA<br>~~eee~~|VCB= -80V<br>VCB= -80V,TA= +100°C<br>~~eee~~|
|Collector Cutoff Current<br>~~ee~~|ICER<br>R ≤1kΩ<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|< -1<br>—<br>~~ee~~<br>~~eee~~|-20<br>-500<br>~~ee~~<br>~~eee~~|nA<br>nA<br>~~ee~~<br>~~eee~~|VCB= -80V<br>VCB= -80V,TA= +100°C<br>~~ee~~<br>~~eee~~|
|Emitter Cutoff Current<br>~~ee~~|IEBO<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|< -1<br>~~ee~~<br>~~eee~~|-10<br>~~ee~~<br>~~eee~~|nA<br>~~ee~~<br>~~eee~~|VEB= -6V<br>~~ee~~<br>~~eee~~|
|DC Current Transfer Static Ratio (Note 9)<br>~~FE~~<br>~~po~~|hFE<br>~~ee~~<br>~~FE~~|100<br>100<br>45<br>10<br>~~FE~~|250<br>200<br>90<br>25<br>~~eee~~<br>~~FE~~|—<br>300<br>—<br>—<br>~~eee~~<br>~~FE~~|—<br>~~eee~~<br>~~FE~~|IC= -10mA, VCE = -1V<br>IC= -2A, VCE = -1V<br>IC= -5A, VCE = -1V<br>IC= -10A,VCE = -1V<br>~~eee~~<br>~~FE~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~po~~|VCE(SAT)|—|-14<br>-50<br>-75<br>-160|-20<br>-65<br>-110<br>-215|mV|IC = -100mA, IB = -10mA<br>IC = -1A, IB = -100mA<br>IC = -2A, IB = -200mA<br>IC = -5A,IB = -500mA|
|Base-Emitter Saturation Voltage(Note 9)<br>~~po~~<br>~~a~~|VBE(SAT)|—|-950<br>~~QO~~|-1050<br>~~QO~~|mV<br>~~(OQ~~|IC= -5A,IB = -500mA<br>~~(OQ~~|
|Base-Emitter Turn-on Voltage(Note 9)<br>~~po~~<br>~~DQ~~<br>~~a~~|VBE(ON)<br>~~DQ~~<br>~~ee~~|—<br>~~DQ~~<br>~~ee~~|-840<br>~~DQ~~<br>~~QO~~<br>~~ee~~|-950<br>~~DQ~~<br>~~QO~~<br>~~ee~~|mV<br>~~DQ~~<br>~~(OQ~~<br>~~ee~~|IC= -5A,VCE= -1V<br>~~DQ~~<br>~~(OQ~~|
|Transitional Frequency (Note 9)<br>~~a~~|fT<br>~~ee~~|—<br>~~ee~~|120<br>~~QO~~<br>~~ee~~|—<br>~~QO~~<br>~~ee~~|MHz<br>~~(OQ~~<br>~~ee~~|IC= -100mA, VCE = -10V,<br>f = 50MHz<br>~~(OQ~~|
|Output Capacitance<br>~~a~~|COBO<br>~~ee~~|—<br>~~ee~~|48<br>~~QO~~<br>~~ee~~|—<br>~~QO ~~<br>~~ee~~|pF<br> ~~(OQ~~<br>~~ee~~|VCB = -10V,f = 1MHz<br>~~(OQ~~|
|Switching Time<br>~~ee~~|tON<br>~~ee ~~<br>~~ee~~|—<br> ~~ee~~<br>~~ee~~|39<br>~~ee ~~<br>~~ee~~|—<br> ~~ee ~~<br>~~ee~~|ns<br> ~~ee~~<br>~~ee~~|VCC = -10V, IC= -1A,<br>IB1= -IB2= -100mA<br>~~ee~~|
||tOFF<br>~~ee~~||370<br>~~ee~~||||



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ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

September 2018 © Diodes Incorporated 

**ZXTP2012Z** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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1 0.5<br>T =25oC I /I =10<br>A C B<br>aesi AA | 0.4 a a ti<br>Cr I C /I B =50 ant 0 <a a<br>100m UT 0.3<br>I /I =20<br>C B<br>SSE ty SV)eye 0.2 EHPTL TAIE EI 100 o C LA |<br>eee IC/IB=10 0.1 I CT 25 o C SAT<br>10m oval or a<br>-55 o C<br>E e e 0.0 CneTae ||<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>-IC   Collector Current (A) -IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>3 00 1.4<br>1.4 V CE =1V I C /I B =10<br>1.2 Scmamiillnail 100 o C iN1S|as i 250 1.2 plaEYEET -55oC LA<br>1.0 PCTTT TTT NPT 2 00 1.0 ri 25 o C | NUA<br>0.8 Scorn 25 o C 1 a is Wh<br>Baill TE Pa An 150 PT SA<br>0.8<br>0.6 Cn PI SE PTT ee ATT<br> )CA Cn NI Sorin)amtTSTLT TTITIIT I<br>1 00<br>TN Le ge<br>0.4 allPT -55 o C HE1aTTT TSAI 0.6 ttPTTNST<br>0.2 TT TT TT] 50 0.4 ae ie 100oC Cry<br>0.0 0a 0 tT]a iia| [THN] |<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>-IC   Collector Current (A) -IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.4<br>V =1V<br>CE<br>1.2 ee|ea ee<br>-55oC<br>1.0 pna gfa)a<br>25 o C<br>0.8 pf ee |<br>PTT yp SMA<br>err TT AT<br>0.6<br>Pt<br>ee|he<br>0.4 peen 100 ne oC PTT||<br>1m 10m 100m 1 10<br>-IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>-V -V<br>)<br>FE   (V)<br>BE(SAT)<br>-V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>-V<br>**----- End of picture text -----**<br>


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ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

September 2018 © Diodes Incorporated 

**ZXTP2012Z** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT89** 

**==> picture [508 x 631] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1<br>c<br>SOT89<br>Dim  Min  Max  Typ<br>A  1.40 1.60 1.50<br>B  0.50 0.62  0.56<br>H B1  0.42  0.54  0.48<br>E c  0.35 0.43 0.38<br>D  4.40 4.60 4.50<br>D1  1.62  1.83 1.733<br>D2  1.61  1.81  1.71<br>B1 L E  2.40 2.60 2.50<br>B E2  2.05 2.35 2.20<br>e  -  -  1.50<br>e H  3.95 4.25 4.10<br>D2<br>H1  2.63 2.93 2.78<br>L  0.90 1.20 1.05<br>L1  0.327  0.527  0.427<br>z  0.20 0.40 0.30<br>H1 All Dimensions in mm<br>E2<br>A<br>L1<br>a D z<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT89<br>X2<br>Value<br>Dimensions<br>(in mm)<br>T ae —__| C  1.500<br>G  0.244<br>Y3 X  0.580<br>Y1 X1  0.760<br>X2  1.933<br>Y4 X G Y  1.730<br>Y1  3.030<br>Y2  1.500<br>Y3  0.770<br>Y<br>Y2 Y4  4.530<br>ha __<br>X1<br>a it C —<br>6 of 7  September 2018<br>www.diodes.com   © Diodes Incorporated<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

**ZXTP2012Z** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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ZXTP2012Z Document number: DS33713  Rev. 5 - 2 

September 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXTP2012ZTA/bipolar-bjt-single-transistor-pnp-80-v-43-a-15-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxtp2012zta/trans-pnp-lo-sat-60v-4-3a-sot89/dp/1843774)
---

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