# Bipolar (BJT) Single Transistor, PNP, 80 V, 5 A, 1.6 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:1471171/)

**URL**: https://novapart.co/products/ZXTP2012GTA/bipolar-bjt-single-transistor-pnp-80-v-5-a-16-w
**SKU**: ZXTP2012GTA
**Manufacturer**: DIODES INC.
**Price**: €0.3350
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:120MHz; Power Dissipation Pd:1.6W; DC Collector Current:5A; DC Current Gain hFE:250hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 120MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 250hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1471171/)

**Green** ~~@~~ 

**ZXTP2012G** J 

**60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -60V 

- IC = -5.5A Continuous Collector Current 

- ICM = -15A Peak Pulse Current 

- Low Saturation Voltage  VCE(SAT) < -70mV Max @ -1A 

- RSAT = 39mΩ @ -5A for Low Equivalent On-Resistance 

- hFE Specified up to -10A for High Gain Hold Up 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

   - Case: SOT223 

   - Case Material: Molded Plastic. “Green” Molding Compound. 

   - UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- DC-DC Converters 

- MOSFET Gate Drivers 

- Charging Circuits 

- Power Switches 

- Motor Control 

**==> picture [33 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT223<br>**----- End of picture text -----**<br>


Top View 

Device Schematic 

Pin-Out Top View 

## **Ordering Information** (Note 4) 

|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|---|
|ZXTP2012GTA|AEC-Q101|ZXTP2012|7|12|1,000|



Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**SOT223** 

**==> picture [55 x 32] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZXTP<br>2012<br>YWW<br>**----- End of picture text -----**<br>


ZXTP 2012 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week code (01 - 53) 

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**ZXTP2012G** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-100|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-5.5|A|
|Peak Pulse Current|ICM|-15|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|3.0<br>24|W<br>mW/°C|
||(Note 6)||1.6<br>12.8||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|42|°C/W|
||(Note 6)|RθJA|78||
|Thermal Resistance,Junction to Lead|(Note 7)|RθJL|8.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge– Human BodyModel|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge– MachineModel|ESD MM|400|V|C|



Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 

6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**ZXTP2012G** 

## BOD Sy 

## **Thermal Characteristics and Derating Information** 

**==> picture [429 x 340] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 V CE(sat) 3.0<br>Limit<br>2.5 See note (5)<br>1 TSS DC  SAH 2.0 ENG<br>1s 1.5<br>100ms<br>100m pT 10ms ZS NSH 1.0 See note (6) NYT N | of<br>Single Pulse. T amb =25 ° C 1ms 0.5<br>100µs<br>See note (5)<br>10m PY 0.0 Pt EE |PRL<br>100m 1 10 100 0 20 40 60 80 100 120 140 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>40 See note (5) Single Pulse. T amb =25°C<br>rer 100 tL. See note (5)<br>a Ea 7 alll Se Se, ae<br>30<br>D=0.5<br>20 LTsecu LAA. O00nene<br>10<br>2<br>D=0.2 Single Pulse<br>10<br>D=0.05<br>Pe Bai oe A ON. IN id SeerAet eaAet eaet ea ea<br>D=0.1<br>0 Sse gf 1 UII VT EUTIE UI VA ETT UT<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**==> picture [207 x 154] intentionally omitted <==**

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Single Pulse. T amb =25°C<br>100 See note (5)<br>Se Se, ae<br>O00nene<br>10<br>SeerAet eaAet eaet ea ea<br>1<br>UII VT EUTIE UI VA ETT UT<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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ZXTP2012G Document number: DS33712 Rev. 2 - 2 

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**ZXTP2012G** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|-100|-120|—|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage|BVCER|-100|-120|—|V|IC= -1µA,RB ≤ 1kΩ|
|Collector-Emitter Breakdown Voltage(Note 9)|BVCEO|-60<br>~~GQ~~|-80<br>~~GQ~~|—<br>~~GQ~~|V<br>~~S(O~~|IC= -10mA<br>~~S(O~~|
|Emitter-Base Breakdown Voltage<br>~~GO~~|BVEBO<br>~~GO~~|-7<br>~~GO~~<br>~~GQ~~|-8.1<br>~~GO~~<br>~~GQ~~|—<br>~~GO~~<br>~~GQ~~|V<br>~~GO~~<br>~~S(O~~|IE= -100µA<br>~~GO~~<br>~~S(O~~|
|Collector Cutoff Current<br>~~a~~|ICBO<br>~~a~~<br>~~ee~~|—<br>—<br>~~GQ~~<br>~~a~~<br>~~ee~~|< -1<br>—<br>~~GQ~~<br>~~a~~<br>~~ee~~|-20<br>-0.5<br>~~GQ~~<br>~~a~~<br>~~ee~~|nA<br>µA<br>~~S(O~~<br>~~a~~<br>~~eeee~~|VCB= -80V<br>VCB= -80V,TA= +100°C<br>~~S(O~~<br>~~a~~<br>~~ee~~|
|Collector Cutoff Current<br>~~ee~~|ICER<br>R≤1kΩ<br>~~ee~~<br>~~ee~~|—<br>—<br>~~ee~~<br>~~ee~~|< -1<br>—<br>~~ee~~<br>~~ee~~|-20<br>-0.5<br>~~ee~~<br>~~ee~~|nA<br>µA<br>~~ee~~<br>~~eeee~~|VCB= -80V<br>VCB= -80V,TA= +100°C<br>~~ee~~<br>~~ee~~|
|Emitter Cutoff Current<br>~~ee~~|IEBO<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~tt~~|< -1<br>~~ee~~<br>~~ee~~<br>~~tt~~|-10<br>~~ee~~<br>~~ee~~<br>~~tttf~~|nA<br>~~ee~~<br>~~eeee~~<br>~~tf~~|VEB= -6V<br>~~ee~~<br>~~ee~~<br>~~tf~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~tt~~|VCE(SAT)<br>~~ee~~<br>~~tt~~|—<br>~~ee~~<br>~~tt~~<br>~~tt~~|-15<br>-55<br>-90<br>-195<br>~~ee ~~<br>~~tt~~<br>~~tt~~|-25<br>-70<br>-120<br>-250<br> ~~ee~~<br>~~tt~~<br>~~tttf~~|mV<br>~~eeee~~<br>~~tt~~<br>~~tf~~|IC= -0.1A, IB= -10mA<br>IC= -1A, IB= -100mA<br>IC= -2A, IB= -200mA<br>IC= -5A,IB= -500mA<br>~~ee~~<br>~~tt~~<br>~~tf~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~tt~~<br>~~a~~|VBE(SAT)<br>~~tt~~<br>|—<br>~~tt~~<br>~~tt~~<br>|-1.03<br>~~tt~~<br>~~tt~~<br>GO<br>|-1.15<br>~~tt~~<br>~~tttf~~<br>GO~~(OO~~<br>|V<br>~~tt~~<br>~~tf~~<br>~~(OO~~<br>|IC= -5A,IB= -500mA<br>~~tt~~<br>~~tf~~<br>~~(OO~~<br>|
|Base-Emitter Turn-On Voltage(Note 9)<br>~~GG~~<br>~~a~~|VBE(ON)<br>~~GG~~<br>|—<br>~~tt~~<br>~~GG~~<br>|-0.92<br>~~tt~~<br>~~GG~~<br>GO<br>|-1.02<br>~~tttf~~<br>~~GG~~<br>GO~~(OO~~<br>|V<br>~~tf~~<br>~~GG~~<br>~~(OO~~<br>|IC= -5A,VCE= -1V<br>~~tf~~<br>~~GG~~<br>~~(OO~~<br>|
|DC Current Gain (Note 9)<br>~~a ~~<br>~~ee~~|hFE<br>|100<br>100<br>45<br>10<br>~~tt~~<br> ~~ee~~|250<br>200<br>90<br>25<br>~~tt~~<br>GO<br>~~ee~~|300<br>~~tt tf~~<br>GO~~(OO~~<br>~~ee~~|—<br>~~tf~~<br>~~(OO~~<br>~~ee~~|IC= -10mA, VCE= -1V<br>IC= -2A, VCE= -1V<br>IC= -5A, VCE= -1V<br>IC= -10A,VCE= -1V<br>~~tf~~<br>~~(OO~~<br>~~ee~~|
|Transition Frequency<br> <br>~~ee~~|fT<br>|—<br> ~~ee~~|120<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|MHz<br>~~ee~~<br>~~ee~~|VCE= -10V, IC= -100mA,<br>f =50MHz<br>~~ee~~<br>~~ee~~|
|Output Capacitance(Note 9)<br> <br>~~ee~~|COBO<br> <br>~~ns~~|—<br> ~~ee~~<br>~~ee~~|48<br>~~ee~~<br>~~ee~~<br>~~ern~~|—<br>~~ee~~<br>~~ee~~<br>~~ern~~|pF<br>~~ee~~<br>~~ee~~<br>~~ern~~|VCB= -10V,f = 1MHz<br>~~ee~~<br>~~ee~~|
|Switching Times<br> <br>~~ee~~<br>~~ee~~|tON<br> <br>~~ee~~<br>~~ns~~|—<br> ~~ee~~<br>~~ee~~<br>~~ee~~|39<br>~~ee~~<br>~~ee~~<br>~~ern~~|—<br>~~ee~~<br>~~ee~~<br>~~ern~~|ns<br>~~ee~~<br>~~ee~~<br>~~ern~~|VCC= -10V, IC= -1A,<br>IB1= -IB2= 100mA<br>~~ee~~<br>~~ee~~|
||tOFF<br> <br>~~ee~~<br>~~ns~~|—<br> ~~ee~~<br>~~ee~~<br>~~ee~~|370<br>~~ee~~<br>~~ee~~<br>~~ern~~|—<br>~~ee~~<br>~~ee~~<br>~~ern~~|||



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**ZXTP2012G** |sd 

## nS. 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [441 x 550] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.5<br>Tamb=25°C I /I =10<br>PT TTattt ee A Y| 0.4 C B a|| 1/ |<br>I /I =50<br>et C B CCT Aa PETIT<br>100m FTTH | NMA 0.3 PE UTITT TTITUTTIMT TUTEUTIIT TU |_|TEA<br>I /I =20<br>C B<br>==seerSe {eeSSes ee 0.2 aa eT 100°C —AHi |<br>a aii _ 25°C 9 //,<br>10m Sat Tl IC/IB=10 in 0.1 aE ie,2A<br>er ee 0.0 || -55°C<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>300 1.4<br>1.4 V CE =1V I C /I B =10<br>1.21.0 mailSoanilI 100°C Te1 Th m Co 250200 1.2 CoAaET -55°C ie LA<br>Sr CIINCCIT NI 1.0 rit 25°C Tn SSTa SMAT<br>0.8 0 25°C rns PM, Te<br>CO SV 150 MU | ey<br>0.8<br>0.6 er CeeAnrNSCT] aSTeeSee ETT I<br>100<br>TN wu, fiimees aii<br>0.4 Ls AN 0.6 ee0<br>mill -55°C MTT TSAI rTTNT<br>0.2 lll 50 100°C TE<br>A a | 0.4 ae ie Crm<br>0.0 PCE CT CTS 0 PILtt ETTfifenie<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.4<br>V =1V<br>CE<br>1.2 HITaa<br>-55°C<br>1.0 HHH.a ll dta)crt oa a<br>25°C<br>0.8 pf We Ta |<br>Se sl<br>eer eA<br>0.6<br>| | ee<br>ce|<br>0.4 100°C<br>peSe im<br>1m 10m 100m 1 10<br>- IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>- V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


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**ZXTP2012G** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

## **SOT223** 

**==> picture [410 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 Q<br>C SOT223<br>Dim  Min  Max  Typ<br>A 1.55  1.65  1.60<br>A1 0.010 0.15 0.05<br>b 0.60 0.80 0.70<br>b1 2.90 3.10 3.00<br>=== E E1 C 0.20 0.30 0.25<br>D 6.45  6.55  6.50<br>GaugePlane E 3.45  3.55  3.50<br>0.25 E1 6.90  7.10  7.00<br>Seating L e -  -  4.60<br>Plane 4) —EEEE<br>e1 -  -  2.30<br>4 e1 b S52: L 0.85  1.05  0.95<br>Q 0.84  0.94  0.89<br>ptt e I D ===<br>All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**SOT223** 

X1 Y1 ~~al~~ C1 Y2 Y ~~goo~~ X C 

**==> picture [105 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C  2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>C2  8.00<br>**----- End of picture text -----**<br>


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**ZXTP2012G** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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