# Bipolar (BJT) Single Transistor, PNP, 200 V, 2 A, 38.7 W, SOT-89, Surface Mount
**URL**: https://novapart.co/products/ZXTP03200BZTA/bipolar-bjt-single-transistor-pnp-200-v-2-a-387-w
**SKU**: ZXTP03200BZTA
**Manufacturer**: DIODES INC.
**Price**: €0.3240
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 38.7W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 105MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 20hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2A |
| Collector Emitter Voltage Max | 200V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3943414/)
**A Product Line of Diodes Incorporated**
## LICDES.
## **ZXTP03200BZ**
**200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89** Please click here to visit our online spice models database. Please click here to visit our online spice models database.
## **Features**
- BVCEO > -200V
- BVECO > -2V
- Continuous current IC(cont) = 2A
- VCE(sat < -160mV @ -1A
- RCE(sat)=130mΩ
## **Mechanical Data**
- Case: SOT-89
- UL Flammability Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish
- Weight: 0.052 grams (approximate)
- PD = 2.4W
- 2 Amps continuous current
- Up to 5 Amps peak current
- Very low saturation voltage
- Enhanced switching performance
## **Applications**
- DC-DC Convertors
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SOT-89
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Top View Device symbol Pin Configuration
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## **Ordering Information**
|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|---|---|---|---|---|
|ZXTP03200BZTA|1N2|7|12|1000|
## **Marking Information**
1N2 = Product type Marking Code
1 of 7 **www.diodes.com**
ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
August 2009 © Diodes Incorporated
**A Product Line of Diodes Incorporated**
## **ZXTP03200BZ** | **200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89**
## **Maximum Ratings** @TA = 25°C unless otherwise specified
|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-220|V|
|Collector-Emitter Voltage|VCEO|-200|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current(Note a)|IC|-2|A|
|Base Current|IB|-1|A|
|Peak Pulse Current|ICM|-5|A|
## **Thermal Characteristics**
|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation at TA= 25°C (Note a)
Linear deratingfactor
~~es~~
~~ee~~|PD
~~es~~
~~ee~~|1.1
8.8
~~es~~
~~ee~~|W
mW /°C
~~es~~|
|Power Dissipation at TA= 25°C (Note b)
Linearderatingfactor
~~ee~~|PD
~~ee~~|1.8
14.4
~~ee~~|W
mW /°C|
|Power Dissipation at TA= 25°C (Note c)
Linearderatingfactor
~~ee ~~
~~es~~|PD
~~ee~~
~~es~~
~~ee~~|2.4
19.2
~~ee~~
~~es~~|W
mW /°C
~~es~~|
|Power Dissipation at TA= 25°C (Note d)
Linear deratingfactor
~~ee~~|PD
~~ee~~
~~ee~~
~~ee~~|4.46
35.7
~~ee~~|W
mW /°C
~~ee~~|
|Power Dissipation at TA= 25°C (Note e)
Linearderatingfactor
~~ee~~|PD
~~ee~~
~~ee~~
~~ee~~|38.7
309.6
~~ee~~|W
mW /°C
~~ee~~|
|Junction to Ambient(Note a)|RθJA
~~ee~~|117|°C/W|
|Junction to Ambient(Note b)|RθJA|68|°C/W|
|Junction to Ambient(Note c)|RθJA|51|°C/W|
|Junction to Ambient(Note d)|RθJA|28|°C/W|
|Junction to Lead(Note e)|RθJL|3.23|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|
Notes: a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.
d. As (c) above measured at t<5 seconds
e. Junction to lead from collector Tab. Typical
2 of 7 **www.diodes.com**
ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
August 2009 © Diodes Incorporated
**A Product Line of Diodes Incorporated**
**ZXTP03200BZ**
**200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89**
## **Thermal Characteristics and Derating information**
3 of 7 **www.diodes.com**
ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
August 2009 © Diodes Incorporated
**A Product Line of Diodes Incorporated**
## **ZXTP03200BZ** |
## **200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89**
## **Electrical Characteristics** @TA = 25°C unless otherwise specified
|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|V(BR)CBO|-220|-245||V|IC= -100µA|
|Collector-Emitter Breakdown Voltage|V(BR)CER|-220|-245||V|IC= -1µA,RBE≤ 1kΩ|
|Collector-Emitter Breakdown Voltage(Note f)
~~E>~~|V(BR)CEO
~~E>~~|-220
~~E>~~|-225
~~E>~~|~~E>~~|V
~~E>~~|IC= -10mA
~~E>~~|
|Emitter-Base Breakdown Voltage
~~E>~~|V(BR)EBO
~~E>~~|-7
~~E>~~|-8.4
~~E>~~|~~E>~~|V
~~E>~~|IE= -100µA
~~E>~~|
|Collector-Base Cutoff Current
~~E>~~|ICBO
~~E>~~|~~E>~~|<1
~~E>~~|-50
-0.5
~~E>~~|nA
µA
~~E>~~|VCB= -200V
VCB= -200V,Tamb= 100°C
~~E>~~|
|Emitter Cutoff Current
~~E>~~|IEBO
~~E>~~
~~ee~~|~~E>~~
~~ee~~|<1
~~E>~~
~~ee~~|-10
~~E>~~
~~ee~~|nA
~~E>~~
~~ee~~|VEB= -6V
~~E>~~|
|Static Forward Current Transfer Ratio (Note f)
~~ee~~|hFE
~~ee~~
~~ee~~
~~ee~~|100
100
20
~~ee~~
~~ee~~|195
179
50
5
~~ee~~
~~ee~~|300
~~ee~~
~~ee~~|~~ee~~
~~ee~~|IC= -10mA, VCE= -5V
IC= -1A, VCE= -5V
IC= -2A, VCE= -5V
IC= -5A,VCE= -5V
~~ee~~|
|Collector-Emitter Saturation Voltage (Note f)
~~ee~~|VCE(SAT)
~~ee ~~
~~ee~~
~~ee~~|~~ee~~
~~ee~~|-37
-120
-130
-160
~~ee~~
~~ee~~|-50
-155
-160
-260
~~ee~~
~~ee~~|mV
mV
mV
mV
~~ee~~
~~ee~~|IC= -100mA, IB= -10mA
IC= -500mA, IB= -25mA
IC= -1A, IB= -100mA
IC= -2A,IB= -400mA
~~ee~~|
|Base-Emitter Saturation Voltage(Note f)
~~ee~~|VBE(sat)
~~ee~~
~~ee~~|~~ee~~|-940
~~ee~~|-1100
~~ee~~|mV
~~ee~~|IC= -2A,IB = -400mV
~~ee~~|
|Base-Emitter Turn-On Voltage(Note f)|VBE(ON)
~~ee~~||-840|-1000|mV|IC= -2A,VCE= -5V|
|Output Capacitance(Note f)
~~SE~~|Cobo
~~SE~~|~~SE~~|31
~~SE~~|~~SE~~|pF
~~SE~~|VCB= -10V. f = 1MHz
~~SE~~|
|Transition Frequency
~~SE~~
~~———~~|fT
~~SE~~|~~SE~~|105
~~SE~~|~~SE~~
~~ee~~|MHz
~~SE~~
~~ee~~|VCE= -10V, IC= -100mA
f =50MHz
~~SE~~
~~ee~~|
|DelayTime
~~SE~~
~~———~~|td
~~SE~~|~~SE~~|21
~~SE~~|~~SE~~
~~ee~~|ns
~~SE~~
~~ee~~|VCC= -50V, IC= -1A
IB1= -IB2= -100mA
~~SE~~
~~ee~~|
|Rise Time
~~———~~|tr||18|~~ee~~|ns
~~ee~~||
|Storage Time
~~———~~|Ts||680|~~ee~~|ns
~~ee~~||
|Fall Time
~~———~~|Tf||75|~~ee~~|ns
~~ee~~||
Notes: f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2%
4 of 7 **www.diodes.com**
ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
August 2009 © Diodes Incorporated
**A Product Line of Diodes Incorporated**
**ZXTP03200BZ**
**200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89**
## **Typical Characteristics**
5 of 7 August 2009 **www.diodes.com** © Diodes Incorporated
ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
**A Product Line of Diodes Incorporated**
**ZXTP03200BZ**
## **200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89**
## **Package Outline Dimensions**
## **Suggested Pad Layout**
6 of 7
ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
August 2009 © Diodes Incorporated
**www.diodes.com**
**A Product Line of Diodes Incorporated ZXTP03200BZ** ~~[~~ **200V PNP LOW V C E ( s at ) TRANSISTOR IN SOT-89**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
**www.diodes.com**
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ZXTP03200BZ Document Number DS31902 Rev. 2 - 2
August 2009 © Diodes Incorporated
## Links
- [View this product on Novapart](https://novapart.co/products/ZXTP03200BZTA/bipolar-bjt-single-transistor-pnp-200-v-2-a-387-w)
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- [Supplier page](https://es.farnell.com/diodes-inc/zxtp03200bzta/trans-pnp-200v-2a-150deg-c-2-4w/dp/3943414)
---
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