# Bipolar (BJT) Single Transistor, NPN, 100 V, 2.5 A, 4.46 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3943402/)

**URL**: https://novapart.co/products/ZXTN25100DZTA/bipolar-bjt-single-transistor-npn-100-v-25-a-446-w
**SKU**: ZXTN25100DZTA
**Manufacturer**: DIODES INC.
**Price**: €0.1900
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 4.46W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 175MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 20hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2.5A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943402/)

**ZXTN25100DZ** J 

## DIODES. 

## **100V NPN MEDIUM POWER TRANSISTOR IN SOT89** 

## **Features** 

## **Mechanical Data** 

- BVCEO > 100V 

- BVECO > 6V 

- IC = 2.5A Continuous Collector Current 

- ICM = 3.5A Peak Collector Current 

- VCE(SAT) < 100mV @ 1A 

- RCE(SAT) = 80mΩ for a Low Equivalent On-Resistance 

- Complementary PNP Type: ZXTP25100CZ 

   - Case: SOT89 

   - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.05 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SOT89<br>C<br>E<br>B C C<br>B<br>E<br>Top View  Device Symbol  Top View<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|---|
|ZXTN25100DZTA|AEC-Q101|1K9|7|12|1,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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1K9 1K9 = Product Type Marking Code<br>**----- End of picture text -----**<br>


1 of 8 **www.diodes.com** 

ZXTN25100DZ Document number: DS33706  Rev. 2 - 2 

June 2017 © Diodes Incorporated 

**ZXTN25100DZ** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|180|V|
|Collector-Emitter Voltage(Forward Blocking)|VCEX|180|V|
|Collector-Emitter Voltage|VCEO|100|V|
|Emitter-Collector Voltage(Reverse Blocking)|VECO|6|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|2.5|A|
|Peak Pulse Current|ICM|3.5|A|
|Base Current|IB|1|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|1.1<br>8.8|W<br>mW/°C|
||(Note 6)||1.8<br>14.4||
||(Note 7)||2.4<br>19.2||
||(Note 8)||4.46<br>35.7||
|Thermal Resistance, Junction to Ambient Air|(Note 5)|RθJA|117|°C/W|
||(Note 6)||68||
||(Note 7)||51||
||(Note 8)||28||
|Thermal Resistance, Junction to Lead|(Note 9)|RθJL|7.95||
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 10) 

|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



- Notes: 5.   For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 0.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   6.   Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 

   7.   Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 

   8.   Same as Note 7, except the device is measured at t<5 seconds. 

   9.   Thermal resistance from junction to solder-point (on the exposed collector pad). 

   10.  Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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ZXTN25100DZ Document number: DS33706  Rev. 2 - 2 

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**ZXTN25100DZ** 

## **Thermal Characteristics and Derating Information** 

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10 1m<br>V Limited CE(SAT) CE(sat) see note 7 Failure may occur<br>Limited AIK ARKNNIKA NTT PPP Pee in this region an<br>100µ<br>1 OAR AAA OS SSSS==5——— BV =100V == === ==<br>BR(CEO)<br>DC<br>Pa 1s TO SNDAA 10µ ERR<br>Po OP NERS AT a<br>100ms<br>100m<br>popee INST PRESSEEEE EEE<br>10ms OS 1µ SRGSSSSGGG00000000 08<br>Single Pulse 1ms BV =180V<br>T amb =25 ° C 100µs Tamb=25°C BR(CEX)<br>10m Serr ] Fo E RFFFRAHC FFaa<br>100m 1 10 100 0 20 40 60 80 100 120 140 160 180 200<br>VCE  Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>2.4 FT |]<br>— see note 7 a<br>2.0 Pot e\ ||<br>see note 6<br>eeor XK —_<br>1.6<br>1.2 Po eX see note 5<br>0.8 po RNR KR<br>Po ea SSRR<br>Po<br>0.4<br>ee ER A<br>J Neee ee<br>0.0<br>0 20 40 60 80 100 120 140 160<br> Temperature (°C)<br>Derating Curve<br>  Collector Current (A)  Collector Current (A)C<br>C<br>I  I<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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Ss ZXTN25100DZ<br>ee are o- C<br>Thermal Characteristics and Derating Information<br>Bes<br>120100 see note 5T amb =25°C Tm+H ) 100 =Siesta| at a oe: al CI [re] mt [Stet][art] SinT = amb g — le Pulse=25°C om;i<br>alTan Sei NI ae [eat] mt aie [Scant] mull [CH] I see note 5<br>80 alevap Eee r T IN G | m t llTt |<br>XL [il]<br>Hill N<br>D=0.5<br>60 : rites [eee,] MAa fj ||1(i [&] Billalll 10 | ===Setiine [cal] lime [ a] HH [ma] SoH | a [vat] Il |<br>Ye“A [il] | Uf<br>40 sii Hl [aarimaail] St |aii {HMECH | HT [‘rth]<br>a D=0.2  ry i yer [VD] Sing [il] le Pulse | Hea ia<br>20 ll iii [WAG] itt D=0.05 iell ee| alllceNu<br>Hag He<br>elae mani ne I<br>D=0.1<br>0 —arama [—ar] To |milliwal2. allwl iin iii HT ll | 1 aaa: al [a] mul<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>75 100 — =<br>70 : T amb =25°C Saisial IT] CI im SinT gle Pulse=25°C<br>60 see note 6 Hi SUE [ce] [ct] amb 1<br>oeah"ae [Si] Ee [ee] Hal Ht see note 6<br>50 HH / Bil |e stat eeHM [i]  Bice [ tie] Mill TTil |<br>D=0.5 lll<br>40 || | ~™sl‘ l| [|| |<br>BPeeer |dé 10 ==<br>=<br>30 Beauereull Seimei<br>Pra [jp] 4 pon [St]<br>D=0.2 ws , Single Pulse [Sct] Se Suuct<br>20 SaCll [Si]  Aibisiles gas<br>eae HHH<br>a [See][ e][ ae] D=0.05 HliG i atSeat<br>10 |_| im<br>— [sai][ TA] D=0.1 [Ses] nim Hmill<br>Bee=eavii? [|] eeie Hie an mil [ae] il [iB] iM | a Tm<br>0 1<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>T =25°C Col lg 100 =r N HHH =H 7—=<br>50 amb Single Pulse<br>H<br>see note 7 \ [nt] Sail mai Tamb=25°C<br>40 nee. rae ! see note 7 l<br>anim [Ce] iil bENSUHe He LT |<br>D=0.5 mill<br>30<br>melU I ‘BaeMIPS [NI][al] ||<br>nel TT 10<br>20 D=0.2 lI_Z “1, Oy Zo Single Pulse iiamoI LIMBartaSono cn [oN][r] HH [HSH] | [KH] | Ht Ht Hlmen<br>meerjp al [eA] eae<br>Hl HH [ch] [at]<br>LyPi [Mim] il i D=0.05 “HHA TT<br>10 Milt a ti te|| Ge ail [Bice] otaMi [So] ill [ill] mlili [a]<br>pee D=0.1<br>eelSai seen ili aii allHN [ll] 1 ||il l Till ; [|B] | cilaiilites aM  ml<br>0 1<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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ZXTN25100DZ Document number: DS33706  Rev. 2 - 2 

June 2017 © Diodes Incorporated 

**ZXTN25100DZ** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~a~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage<br>~~a~~|BVCBO<br>~~ee~~|180<br>~~ee~~|220<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IC= 100µA|
|Collector-Emitter Breakdown Voltage<br>(Forward Blocking)<br>~~ee~~|BVCEX<br>~~ee~~<br>~~ee~~<br>~~Gn~~|180<br>~~ee~~<br>~~ee~~<br>~~nD~~|220<br>~~ee~~<br>~~ee~~<br>~~nD~~|—<br>~~ee~~<br>~~ee~~<br>~~OUD~~|V<br>~~ee~~<br>~~ee~~<br>~~(OO~~|IC= 100µA, RBE<1kΩ or<br>-1V > VBE> 0.25V<br>~~ee~~<br>~~(OO~~|
|Collector-Emitter Breakdown Voltage (Note 11)<br>~~rn~~|BVCEO<br>~~ee~~<br>~~rn~~<br>~~Gn~~|100<br>~~ee ~~<br>~~rn~~<br>~~nD~~<br>~~ee~~|130<br> ~~ee ~~<br>~~rn~~<br>~~nD~~<br>~~ee~~|—<br> ~~ee~~<br>~~rn~~<br>~~OUD~~<br>~~ee~~|V<br>~~ee~~<br>~~rn~~<br>~~(OO~~<br>~~ee~~|IC= 10mA<br>~~rn~~<br>~~(OO~~<br>~~ee~~|
|Emitter-Collector Breakdown Voltage<br>(Reverse Blocking)<br>~~ee~~|BVECX<br>~~Gn~~<br>~~ee~~<br>~~ee~~|6<br>~~nD~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|8.2<br>~~nD~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~OUD ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br> ~~(OO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|IE= 100µA, RBC<1kΩ or<br>0.25V > VBC> -0.25V<br>~~(OO~~<br>~~ee~~<br>~~ee~~|
|Emitter-Collector Breakdown Voltage<br>(Reverse Blocking)<br>~~ee~~|BVECO<br>~~ee~~<br>~~ee~~<br>~~ny St~~|6<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~St~~|8.7<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~nD~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~UD~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~I~~|IE= 100µA<br>~~ee~~<br>~~ee~~|
|Emitter-Base Breakdown Voltage<br>~~ry~~|BVEBO<br>~~ee ~~<br>~~ry~~<br>~~ny St~~<br>~~ee~~|7<br> ~~ee ~~<br>~~ry~~<br>~~St~~<br>~~ee~~|8.3<br> ~~ee ~~<br>~~ry~~<br>~~nD~~|—<br> ~~ee ~~<br>~~ry~~<br>~~UD~~|V<br> ~~ee~~<br>~~ry~~<br>~~I~~|IE= 100µA<br>~~ry~~|
|Collector-Base Cutoff Current<br>~~ee~~<br>~~rT~~|ICBO<br>~~ny St~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~St~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|<1<br>~~nD ~~<br>~~ee~~<br>~~ee~~|50<br>0.5<br> ~~UD ~~<br>~~ee~~<br>~~ee~~|nA<br>µA<br> ~~I~~<br>~~ee~~<br>~~ee~~|VCB= 180V<br>VCB= 180V, TA= +100°C<br>~~ee~~|
|Collector-Emitter Cutoff Current<br>~~ee~~<br>~~rT~~|ICEX<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|nA<br>~~ee~~<br>~~ee~~|VCE= 100V, RBE<1kΩ or<br>1V < VBE< 0.25V<br>~~ee~~|
|Emitter Cutoff Current<br>~~rT~~<br>~~|fPrrp..~~|IEBO<br>~~ee~~<br>~~|fPrrp..~~|—<br>~~ee~~<br>~~|fPrrp..~~|<1<br>~~ee~~<br>~~|fPrrp..~~|50<br>~~ee~~<br>~~|fPrrp..~~|nA<br>~~ee~~<br>~~|fPrrp..~~|VEB= 5.6V<br>~~|fPrrp..~~|
|DC Current Transfer Static Ratio (Note 11)<br>~~rT~~<br>~~|fPrrp..~~<br>~~a~~|hFE<br>~~ee~~<br>~~|fPrrp..~~<br>|300<br>120<br>40<br>—<br>~~ee~~<br>~~|fPrrp..~~<br>|450<br>170<br>60<br>20<br>~~ee~~<br>~~|fPrrp..~~<br>|900<br>—<br>—<br>—<br>~~ee~~<br>~~|fPrrp..~~<br>|—<br>~~ee~~<br>~~|fPrrp..~~<br>|IC= 10mA, VCE= 2V<br>IC= 0.5A, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 2.5A, VCE= 2V<br>~~|fPrrp..~~<br>|
|Collector-Emitter Saturation Voltage (Note 11)<br>~~rT~~<br>~~a~~|VCE(SAT)<br>~~ee ~~<br>|—<br> ~~ee ~~<br>|120<br>80<br>220<br> ~~ee ~~<br>|170<br>100<br>345<br> ~~ee~~<br>|mV<br>~~ee~~<br>|IC= 0.5A, IB= 10mA<br>IC= 1A, IB= 100mA<br>IC= 2.5A, IB= 250mA<br>|
|Base-Emitter Saturation Voltage (Note 11)<br>~~a~~|VBE(SAT)<br><br>~~nn~~|—<br><br>~~(RD~~|935<br><br>~~(RD~~|1000<br><br>~~(S(O~~|mV<br><br>~~(S(O~~|IC= 2.5A, IB= 250mA<br><br>~~(S(O~~|
|Base-Emitter Turn-on Voltage (Note 11)<br>~~ars~~|VBE(ON)<br>~~rs~~<br>~~nn~~<br>~~ee~~|—<br>~~rs~~<br>~~(RD~~|890<br>~~rs~~<br>~~(RD~~|950<br>~~rs~~<br>~~(S(O~~<br>~~ee~~|mV<br>~~rs~~<br>~~(S(O~~<br>~~ee~~|IC= 2.5A, VCE= 2V<br>~~rs~~<br>~~(S(O~~<br>~~ee~~|
|Transitional Frequency<br>~~ee~~|fT<br>~~nn ~~<br>~~ee~~<br>~~ee~~|—<br> ~~(RD~~<br>~~ee~~|175<br>~~(RD~~<br>~~ee~~|—<br>~~(S(O~~<br>~~ee~~<br>~~ee~~|MHz<br>~~(S(O~~<br>~~ee~~<br>~~ee~~|IE= 50mA, VCE= 10V<br>f = 100MHz<br>~~(S(O~~<br>~~ee~~<br>~~ee~~|
|Input Capacitance<br>~~pp~~|CIBO<br>~~ee~~<br>~~pp~~|~~pp~~|154<br>~~pp~~|250<br>~~ee~~<br>~~pp~~|pF<br>~~ee~~<br>~~pp~~|VEB = 0.5V, f = 1MHz<br>~~ee~~<br>~~pp~~|
|Output Capacitance<br>~~pp~~<br>~~ee~~|COBO<br>~~pp~~<br>~~ee~~|—<br>~~pp~~<br>~~Ct~~<br>~~ee eee~~|8.7<br>~~pp~~<br>~~eee~~|15<br>~~pp~~<br>~~eee~~|pF<br>~~pp~~<br>~~eee~~|VCB = 10V, f = 1MHz<br>~~pp~~<br>~~ee~~|
|DelayTime<br>~~nn~~<br>~~ee~~|tD<br>~~nn~~<br>~~ee~~|—<br>~~nn~~<br>~~Ct~~<br>~~ee eee~~|16.4<br>~~nn~~<br>~~eee~~|—<br>~~nn~~<br>~~eee~~|ns<br>~~nn~~<br>~~eee~~|IC= 500mA, VCC= 10V,<br>IB1= -IB2= 50mA<br> ~~ee~~|
|Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~Ct~~<br>~~ee eee~~<br>~~Cn~~|115<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~||
|Storage Time<br>~~ee~~<br>~~nn~~|tS<br>~~ee~~<br>~~nn~~<br>~~(RD~~|—<br>~~Ct~~<br>~~ee eee~~<br>~~nn~~<br>~~Cn~~<br>~~(RD~~|763<br>~~eee~~<br>~~nn~~<br>~~I~~|—<br>~~eee~~<br>~~nn~~<br>~~I~~|ns<br>~~eee~~<br>~~nn~~||
|Fall Time<br>~~ee ~~<br>~~ny~~|tF<br> ~~ee ~~<br>~~ny~~<br>~~(RD~~|—<br>~~Ct~~<br> ~~ee eee~~<br>~~Cn~~<br>~~ny~~<br>~~(RD~~|158<br>~~eee~~<br>~~ny~~<br>~~I~~|—<br>~~eee~~<br>~~ny~~<br>~~I~~|ns<br>~~eee ~~<br>~~ny~~||



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ZXTN25100DZ Document number: DS33706  Rev. 2 - 2 

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**ZXTN25100DZ** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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1 0.7<br>Tamb=25°C I /I =10<br>0.6 C B<br>A | Dain ae<br>alll I C /I B =100 ey ay ee 0.5 es<br>maaei<br>0.4<br>100m LIL [CIS] YYOS [Zl] PatiI a 150 ° C | A<br>I /I =50 0.3 100°C<br>Leer LAA C B 0.2 rf LL 25°C ee ine<br>pol TTiETT ET I C /I B =20 nll rt LPP 4 SN|<br>0.1<br>eee Ri amps aa Oe IC/IB=10 HH po EgSY -55°C<br>ee Hill ee<br>10m 0.0<br>1m 10m 100m 1 10 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.2<br>1.71.6 —H 150 ° C Heel V CE =2V | 800 I C /I B =10 ill -55°C 1<br>Se 700 |<br>1.4 arr is I oo 1.0 Pade aeHna<br>NT— 600 mail 25°C PLUK NY Leetp> ap,<br>1.2<br>LL=n 100°C CONCe_—— Th 500 0.8 PTT=TTSEN =| LeLl” AA<br>1.0 TTS<br>= CTT oT 400 | ee |<br>0.8 Th 25°C 0CoET 0.6 |eHN am case,<br>Pt 300 | ee |<br>0.6 iSti EE |TI TT Lean rT]<br>100°C<br>-55°C 200<br>0.4 a ce CoATVE | 0.4 eeFNiainN al<br>150°C<br>100<br>0.2 CC eet | TTTAIT<br>PC Co SSS 0 0.2 PLTLTT TET<br>0.01m 10m 100m 1 1m 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.2<br>V =2V<br>CE -55°C<br>1.0 EHH 25°C HTT<br>ft i A<br>lll S|<br>0.8<br>TTI Tsien<br>STN<br>0.6 LL eAA<br>100°C<br>et<br>0.4<br>OePeelllll TTT 150°C<br>TNE<br>0.2 TTP TN<br>1m 10m 100m 1<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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**ZXTN25100DZ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT89<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D1<br>c<br>H<br>E<br>B1 L<br>B<br>e<br>D2<br>H1<br>E2<br>A<br>L1<br>D z<br>-—— — — Fu ue<br>a itl<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


|**SOT89**<br>**Dim**<br>**Min**<br>**Max**<br>**T**|**SOT89**<br>**Dim**<br>**Min**<br>**Max**<br>**T**|**SOT89**<br>**Dim**<br>**Min**<br>**Max**<br>**T**|**SOT89**<br>**Dim**<br>**Min**<br>**Max**<br>**T**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|1.40|1.60|1.50|
|**B**|0.50|0.62|0.56|
|**B1**|0.42|0.54|0.48|
|**c**|0.35|0.43|0.38|
|**D**|4.404.|4.60|4.50|
|**D1**|1.62|1.83|1.733|
|**D2**|1.61|1.81|1.71|
|**E**|2.40|2.60|2.50|
|**E2**|2.05|2.35|2.20|
|**e**|-|-|1.50|
|**H**|3.954.2|4.25|4.10|
|**H1**|2.632.|2.93|2.78|
|**L**|0.901.2|1.20|1.05|
|**L1**|0.327|270.527|270.427|
|**z**|0.20|0.40|0.30|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT89** 

**==> picture [148 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
X2<br>Y3<br>Y1<br>m n<br>Y4 X G<br>Y<br>Y2<br>“Oi! X1<br>C<br>**----- End of picture text -----**<br>


**==> picture [98 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  1.500<br>G  0.244<br>X  0.580<br>X1  0.760<br>——<br>X2  1.933<br>Y  1.730<br>Y1  3.030<br>Y2  1.500<br>Y3  0.770<br>Y4  4.530<br>**----- End of picture text -----**<br>


Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. 

7 of 8 **www.diodes.com** 

ZXTN25100DZ Document number: DS33706  Rev. 2 - 2 

June 2017 © Diodes Incorporated 

**ZXTN25100DZ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXTN25100DZ Document number: DS33706  Rev. 2 - 2 

June 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXTN25100DZTA/bipolar-bjt-single-transistor-npn-100-v-25-a-446-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxtn25100dzta/trans-npn-100v-2-5a-150deg-c-2/dp/3943402)
---

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