# Bipolar (BJT) Single Transistor, NPN, 50 V, 4 A, 1.25 W, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4318335/)

**URL**: https://novapart.co/products/ZXTN25050DFH/bipolar-bjt-single-transistor-npn-50-v-4-a-125-w
**SKU**: ZXTN25050DFH
**Manufacturer**: DIODES INC.
**Price**: €0.2530
**Stock**: 10+
**Lead Time**: 295 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 450hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318335/)

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## **ZXTN25050DFH 50V, SOT23, NPN medium power transistor** 

## **Summary** 

**BVCEX > 150V BVCEO > 50V BVECO > 5V I = 4A C(cont) VCE(sat) < 60mV @ 1A** 

**R = 40m** � **CE(sat)** 

**PD = 1.25W** 

## **Description** 

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. 

## **Features** 

- High power dissipation SOT23 package 

- High peak current 

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- High gain 

- Low saturation voltage 

- 150V forward blocking voltage 

- 5V reverse blocking voltage 

## **Applications** 

- MOSFET gate drivers 

- Power switches 

- Motor control 

- DC fans 

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- DC-DC converters 

## **Ordering information** 

|**Device**|**Reel size**<br>**(inches)**|**Tape width**<br>**(mm)**|**Quantity per**<br>**reel**|
|---|---|---|---|
|ZXTN25050DFHTA|7|8|3,000|



## **Device marking** 

017 

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## **ZXTN25050DFH** 

## **Absolute maximum ratings** 

|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Collector-base voltage|VCBO|150|V|
|Collector-emitter voltage (forward blocking)|VCEX|150|V|
|Collector-emitter voltage|VCEO|50|V|
|Emitter-collector voltage (reverse blocking)|VECO|5|V|
|Emitter-base voltage|VEBO|7|V|
|Continuous collector current(c)|IC|4|A|
|Base current|IB|1|A|
|Peak pulse current|ICM|10|A|
|Power dissipation at Tamb=25°C(a)<br>Linear derating factor|PD|0.73<br>5.84|W<br>mW/°C|
|Power dissipation at Tamb=25°C(b)<br>Linear derating factor|PD|1.05<br>8.4|W<br>mW/°C|
|Power dissipation at Tamb=25°C(c)<br>Linear derating factor|PD|1.25<br>9.6|W<br>mW/°C|
|Power dissipation at Tamb=25°C(d)<br>Linear derating factor|PD|1.81<br>14.5|W<br>mW/°C|
|Operating and storage temperature range|Tj, Tstg|- 55 to 150|°C|



## **Thermal resistance** 

|**Thermal resistance**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Limit**|**Unit**|
|Junction to ambient(a)|R�JA|171|°C/W|
|Junction to ambient(b)|R�JA|119|°C/W|
|Junction to ambient(c)|R�JA|100|°C/W|
|Junction to ambient(d)|R�JA|69|°C/W|



## **NOTES:** 

(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d)As (c) above measured at t<5secs. 

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**ZXTN25050DFH** 

## **Characteristics** 

**Issue 3 - September 2006** 

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© Zetex Semiconductors plc 2006 

## **ZXTN25050DFH** 

## **Electrical characteristics (at Tamb = 25°C unless otherwise stated)** 

|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|Collector-base breakdown voltage|BVCBO|150|180||V|IC= 100�A|
|Collector-emitter breakdown<br>voltage (forward blocking)|BVCEX|150|180||V|IC= 100�A, RBE�1k�or<br>-1V < VBE< 0.25V|
|Collector-emitter breakdown<br>voltage (base open)|BVCEO|50|67||V|IC= 10mA(*)|
|Emitter-collector breakdown<br>voltage (reverse blocking)|BVECX|5|8||V|IE= 100�A, RBC �1k�or<br>0.25V > VBC> -0.25V|
|Emitter-collector breakdown<br>voltage (base open)|BVECO|5|7.4||V|IE= 100�A,|
|Emitter-base breakdown<br>voltage|BVEBO|7|8.3||V|IE= 100�A|
|Collector cut-off current|ICBO||<1|50<br>20|nA<br>�A|VCB= 150V<br>VCB= 150V, Tamb= 100°C|
|Collector-emitter cut-off<br>current|ICEX||-|100|nA|VCE= 150V; RBE �1k�or<br>-1V < VBE< 0.25V|
|Emitter cut-off current|IEBO||<1|50|nA|VEB= 5.6V|
|Collector-emitter saturation<br>voltage|VCE(sat)||50<br>160<br>180<br>190<br>160|60<br>260<br>250<br>235<br>210|mV<br>mV<br>mV<br>mV<br>mV|IC= 1A, IB= 100mA(*)<br>IC= 1A, IB= 10mA(*)<br>IC= 2A, IB= 40mA(*)<br>IC= 3,5A, IB= 175mA(*)<br>IC= 4A, IB= 400mA(*)|
|Base-emitter saturation<br>voltage|VBE(sat)||970|1070|mV|IC= 4A, IB= 400mA(*)|
|Base-emitter turn-on voltage|VBE(on)||870|970|mV|IC= 4A, VCE= 2V(*)|
|Static forward current transfer<br>ratio|hFE|300<br>240<br>20|450<br>410<br>40|900||IC= 10mA, VCE= 2V(*)<br>IC= 1A, VCE= 2V(*)<br>IC= 4A, VCE= 2V(*)|
|Transition frequency|fT||200||MHz|IC= 50mA, VCE= 10V<br>f = 100MHz|
|Output capacitance|COBO||12|20|pF|VCB= 10V, f = 1MHz(*)|
|Delay time|t(d)||65||ns|VCC= 10V. IC= 1A,<br>IB1= IB2= 10mA.|
|Rise time|t(r)||111||ns||
|Storage time|t(s)||429||ns||
|Fall time|t(f)||140||ns||



**NOTES:** 

(*) Measured under pulsed conditions. Pulse width � 300�s; duty cycle � 2%. 

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**ZXTN25050DFH** 

## **Typical characteristics** 

**Issue 3 - September 2006** 

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© Zetex Semiconductors plc 2006 

## **ZXTN25050DFH** 

## **Package outline - SOT23** 

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L<br>H<br>N<br>D G<br>3 leads<br>A<br>M B<br>C<br>K F<br>**----- End of picture text -----**<br>


|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min.**|**Max.**|**Min.**|**Max.**||**Min.**|**Max.**|**Max.**|**Max.**|
|A|2.67|3.05|0.105|0.120|H|0.33|0.51|0.013|0.020|
|B|1.20|1.40|0.047|0.055|K|0.01|0.10|0.0004|0.004|
|C|-|1.10|-|0.043|L|2.10|2.50|0.083|0.0985|
|D|0.37|0.53|0.015|0.021|M|0.45|0.64|0.018|0.025|
|F|0.085|0.15|0.0034|0.0059|N|0.95 NOM||0.0375 NOM||
|G|1.90 NOM||0.075 NOM||-|-|-|-|-|



**Note:** Controlling dimensions are in millimeters. Approximate dimensions are provided in inches 

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For international sales offices visit **www.zetex.com/offices** Zetex products are distributed worldwide. For details, see **www.zetex.com/salesnetwork** This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

**Issue 3 - September 2006** © Zetex Semiconductors plc 2006 

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## Links

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