# Bipolar (BJT) Single Transistor, NPN, 40 V, 4 A, 1.25 W, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4318556/)

**URL**: https://novapart.co/products/ZXTN25040DFHTA/bipolar-bjt-single-transistor-npn-40-v-4-a-125-w
**SKU**: ZXTN25040DFHTA
**Manufacturer**: DIODES INC.
**Price**: €0.2380
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 190MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318556/)

**A Product Line of Diodes Incorporated** 

**ZXTN25040DFH** 

## **40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23** 

## **Features and Benefits** 

- BVCEO > 40V 

- IC = 4A Continuous Collector Current 

- Low Saturation Voltage VCE(sat) < 55mV @ 1A 

- RCE(sat) = 35m Ω 

- hFE characterised up to 10A 

- High hFE min 300 @ 1A 

- 1.25W power dissipation 

- 130V forward blocking voltage 

## **Mechanical Data** 

   - Case: SOT23 

   - Case material: Molded Plastic. “Green” Molding Compound (Note 2) UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.008 grams (Approximate) 

- 6V reverse blocking voltage 

- Complementary part number ZXTP25040DFH 

- **“Lead-Free”, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. “Green” Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- MOSFET gate drivers 

- Power switches 

- Motor control 

- DC fans 

- DC-DC converters 

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SOT23<br>Top View<br>**----- End of picture text -----**<br>


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Device Symbol  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

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|||||||
|---|---|---|---|---|---|
|Product|Marking|Reel size (inches)|Tape width (mm)|Quantity|per reel|
|ZXTN25040DFHTA|1A4|7|8|3,000|

**----- End of picture text -----**<br>


Notes: 1. No purposefully added lead. 

2. Diodes Inc‘s “Green” Policy can be found on our website at https://www.diodes.com/ 

3. Devices with lot number starting from PID0155145 (March 2010) are “Green” products. 

## **Marking Information** 

**1A4** 1A4 = Product Type Marking Code 

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ZXTN25040DFH Document number: DS33697 Rev. 2 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTN25040DFH** ~~—~~ 

|**Maximum Ratings** @TA= 25°C unless otherwise specified|**Maximum Ratings** @TA= 25°C unless otherwise specified|ecified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage||VCBO|130|V|
|Collector-Emitter Voltage(Forward Blocking)||VCEX|130|V|
|Collector-Emitter Voltage||VCEO|40|V|
|Emitter-Collector Voltage(Reverse Blocking)||VECO|6|V|
|Emitter-Base Voltage||VEBO|7|V|
|Continuous Collector Current|(Note 6)|IC|4|A|
|Peak Pulse Current||ICM|10|A|
|Base Current||IB|1|A|



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 4)|PD<br>-|0.73<br>5.84|W<br>mW/°C|
||(Note 5)||1.05<br>8.4||
||(Note 6)||1.25<br>9.6||
||(Note 7)||1.81<br>14.5||
|Thermal Resistance, Junction to Ambient|(Note 4)|RθJA|171|°C/W|
||(Note 5)||119||
||(Note 6)||100||
||(Note7)||69||
|Thermal Resistance,Junction to Lead|(Note 8)|RθJL|74.95|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is 

5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

7. As note 6 above, measured at t < 5 seconds 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 

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ZXTN25040DFH Document number: DS33697 Rev. 2 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTN25040DFH** 

## **Typical Thermal Characteristics** 

**==> picture [441 x 544] intentionally omitted <==**

**----- Start of picture text -----**<br>
1m<br>V 50mmX50mm FR4<br>CE(sat)         2oz Cu  Failure may occur<br>1 0 Limited =o ee =======Saeene in this region<br>100 µ<br>BV =40V<br>(BR)CEO<br>1<br>DC 10 µ<br>1s<br>100ms<br>100 m<br>10ms 1 µ<br>1ms<br>Single PulseT amb =25°C 2 rs | 100µs Tamb=25°C -—+—_— BV(BR)CEX=130V<br>10 m PES<br>100m 1 10 eH 0 Be 20 40 60 80 100 120 140<br>VCE  Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>100<br>T =25°C<br>amb 100 Single Pulse<br>80 50mmX50mm FR4        2oz Cu  lle 50mmX50mm FR4Tamb=25°C |<br>        2oz Cu<br>60 D=0.5 ae ai BS a i<br>10<br>40<br>D=0.2 Single Pulse<br>20 ae aim D=0.05 | Tri<br>1<br>D=0.1<br>0 EE a Hal ST Itt<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>1.4<br>50mmX50mm FR4<br>1.2 —         2oz Cu  | |<br>1.0<br>pt N« 25mmX25mm FR4 a<br>        2oz Cu<br>0.8<br>PISS a<br>— ~“S<br>0.6<br>ae Neeeee<br>0.4 15mmX15mm FR4<br>        1oz Cu<br>0.2 oS<br>0.00 Pt 20 40 | 60 PT 80 NN 100 | 120 RR 140 160<br> Temperature (°C)<br>Derating Curve<br>  Collector Current (A)IC  Collector Current (A) IC<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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ZXTN25040DFH Document number: DS33697 Rev. 2 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **ZXTN25040DFH** ~~a~~ 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|**OFF CHARACTERISTICS**|||||||
|Collector-Base Breakdown Voltage<br>~~OO~~|BVCBO<br>~~OO~~|130<br>~~OO~~|170<br>~~OO~~|-<br>~~OO~~|V<br>~~OO~~|IC= 100µA<br>~~OO~~|
|Collector-emitter breakdown voltage<br>(forward blocking)<br>~~OO~~|BVCEX<br>~~OO~~|130<br>~~OO~~|170<br>~~OO~~|-<br>~~OO~~|V<br>~~OO~~|IC= 100µA; RBE< 1kΩor<br>-1V < VBE< 0.25V<br>~~OO~~|
|Collector-Emitter Breakdown Voltage<br>(base open) (Note 9)<br>~~a~~|BVCEO|40|63|-|V|IC= 10mA|
|Emitter-Base Breakdown Voltage|BVEBO|7|8.3|-|V|IE= 100µA|
|Emitter-collector breakdown voltage<br>(reverse blocking)<br>~~LLL~~<br>~~I~~|BVECX<br>~~LLL~~<br>~~ee~~|6<br>~~LLL~~<br>~~ee~~|7.4<br>~~LLL~~<br>~~es~~|-<br>~~LLL~~<br>~~es~~|V<br>~~LLL~~|IE= 100µA; RBC< 1kΩor<br>-0.25V < VBC< 0.25V<br>~~LLL~~|
|Emitter-collector breakdown voltage<br>(base open)<br>~~ee~~<br>~~I~~|BVECO<br>~~ee~~<br>~~ee~~|6<br>~~ee~~<br>~~ee~~|7.4<br>~~ee~~<br>~~es~~|-<br>~~ee~~<br>~~es~~|V<br>~~ee~~|IE= 100µA;<br>~~ee~~|
|Collector-base Cut-off Current<br>~~I~~|ICBO<br>~~ee~~|-<br> ~~ee~~|<1<br>-<br> ~~es ~~<br>~~LL~~|50<br>20<br> ~~es~~<br>~~LL~~|nA<br>µA<br>~~LL~~|VCB= 100V<br>VCB= 100V,TA= 100°C<br>~~LL~~|
|Collector-emitter Cut-off Current<br>~~a~~|ICEX<br>~~a~~|-<br>~~a~~|-<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VCE= 100V; RBE< 1kΩor<br>-1V < VBE< 0.25V<br>~~a~~|
|Emitter-base Cut-off Current<br>~~a~~|IEBO<br>~~a~~|-<br>~~a~~|<1<br>~~a~~|50<br>~~a~~|nA<br>~~a~~|VEB= 5.6V<br>~~a~~|
|**ON CHARACTERISTICS(Note 9)**|||||||
|Static Forward Current Transfer Ratio<br>~~a~~|hFE<br>~~a~~<br>~~eee~~|300<br>300<br>30<br>-<br>~~a~~<br>~~eee~~|450<br>450<br>60<br>10<br>~~a~~<br>~~eee~~|900<br>-<br>-<br>-<br>~~a~~<br>~~eee~~|-<br>~~a~~<br>~~eee~~|IC= 10mA, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 4A, VCE= 2V<br>IC= 10A,VCE= 2V<br>~~a~~<br>~~eee~~|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(sat)<br>~~ee~~|-<br>~~ee~~|45<br>120<br>135<br>140<br>~~ee~~|55<br>210<br>210<br>190<br>~~ee~~|mV<br>~~ee~~|IC= 1A, IB= 100mA<br>IC= 1A, IB= 10mA<br>IC= 2A, IB= 40mA<br>IC= 4A,IB= 400mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~ee~~|VBE(sat)<br>~~ee~~|-<br>~~ee~~|960<br>~~ee~~|1050<br>~~ee~~|mV<br>~~ee~~|IC= 4A,IB= 400mA<br>~~ee~~|
|Base-Emitter On Voltage<br>~~i~~|VBE(on)|-|840|950|mV|IC= 4A,VCE= 2V|
|**SMALLSIGNALCHARACTERISTICS (Note 9)**<br>~~i~~|||||||
|Transition Frequency<br>~~i~~|fT|-|190|-|MHz|IC= 50mA, VCE= 10V,<br>f = 100MHz|
|Collector Output Capacitance<br>~~i~~<br>~~——_———~~|Cobo<br>~~——_———~~|-|11.7|20|pF<br>~~ee~~|VCB= 10V,f = 1MHz<br>~~ee~~|
|Delaytime<br>~~i~~<br>~~——_———~~|td<br>~~——_———~~|-|64|-|ns<br>~~ee~~|VCC= 10V,<br>IC= 1A,<br>IB1= IB2= 10mA<br>~~ee~~|
|Rise time<br>~~——_———~~|tr<br>~~——_———~~|-|108|-|ns<br>~~ee~~||
|Storage time<br>~~——_———~~|ts<br>~~——_———~~|-|428|-|ns<br>~~ee~~||
|Fall time<br>~~——_———~~|tf<br>~~——_———~~|-|130|-|ns<br>~~ee~~||



Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% 

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ZXTN25040DFH Document number: DS33697 Rev. 2 - 2 

January 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTN25040DFH** 

## **Typical Electrical Characteristics** 

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**----- Start of picture text -----**<br>
1 0.7<br>Tamb=25°C I /I =10<br>0.6 C B<br>EHH Se 1<br>I C /I B =100 0.5<br>100m CTI<br>Tae SOUZA) FE<br>0.4 150°C<br>SS er IC/IB=50 0.3 EN 100°C<br>cll ll P| TT TT NTT<br>10m IC/IB=20 0.2 25°C<br>IC/IB=10 0.1<br>-55°C<br>1m a 0.0 e eeieeTT<br>1m 10m 100m 1 10 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.2<br>1.6 150°C V CE =2V 825750 IC/IB=10 -55°C<br>1.4 Si<br>Tn CA SSSIOe 675 1.0 ll 25°C NUM Lei<br>1.2 600<br>rrr milli i | ee |<br>anil 100°C PTS 525 SL ett A<br>1.0<br>=Ty pt aCONE 450 0.8 ee—  ieemaiicaeZ24lll|<br>0.8 eg 25°C RT 375 Ee lll<br>eT on 1 TA SI SapShs<br>0.6 ST NT 300 0.6 Pet<br>TTT Tl<br>0.4 -55°C ee ATTT 225 ere 100°C<br>nN Catt 150 a st A ll<br>0.2 mall a 75 0.4 gE,  pial 150 S ° C ATi<br>0.0 PCSHCn 0 | eel ll ITLLH<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =2V -55 ° C<br>25°C<br>ee<br>aa SS|<br>0.8<br>aa Sent 77<br>0.6<br>tNAllcrt | A<br>ee 100°C<br>0.4<br>a ON es| 150°C een||<br>Pee YT<br>0.2 TMTTT ETI) UT<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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ZXTN25040DFH Document number: DS33697 Rev. 2 - 2 

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**A Product Line of Diodes Incorporated ZXTN25040DFH** [ 

## **Package Outline Dimensions** 

E e b e1 3 leads ~~q| if1~~ D L1 E1 A A1 L c ~~Ss wieeen~~ 

||||L<br>c<br>A1<br>~~Ss wieeen~~|L<br>c<br>A1<br>~~Ss wieeen~~|~~wieeeneeen~~|~~wieeeneeen~~|~~wieeeneeen~~|||
|---|---|---|---|---|---|---|---|---|---|
|**Dim.**<br>~~—————~~|**Millimeters**<br>~~—————~~||**Inches**<br>~~—————~~||**Dim.**<br>~~—————~~|**Millimeters**<br>~~—————~~||**Inches**<br>~~—————~~||
||**Min.**<br>~~—————~~|**Max.**<br>~~—————~~|**Min.**<br>~~—————~~|**Max.**<br>~~—————~~||**Min.**<br>~~—————~~|**Max.**<br>~~—————~~|**Min.**<br>~~—————~~|**Max.**<br>~~—————~~|
|A<br>~~————————~~|-<br>~~————————~~|1.12<br>~~————————~~|-<br>~~————————~~|0.044<br>~~————————~~|e1<br>~~————————~~|1.90 NOM<br>~~————————~~||0.075 NOM<br>~~————————~~||
|A1<br>~~————————~~|0.01<br>~~————————~~|0.10<br>~~————————~~|0.0004<br>~~————————~~|0.004<br>~~————————~~|E<br>~~————————~~|2.10<br>~~————————~~|2.64<br>~~————————~~|0.083<br>~~————————~~|0.104<br>~~————————~~|
|b<br>~~————————~~<br>~~a~~|0.30<br>~~————————~~<br>~~es~~|0.50<br>~~————————~~<br>~~es~~|0.012<br>~~————————~~<br>~~es ee~~|0.020<br>~~————————~~<br>~~ee~~|E1<br>~~————————~~<br>~~se~~|1.20<br>~~————————~~<br>~~se~~|1.40<br>~~————————~~|0.047<br>~~————————~~|0.055<br>~~————————~~|
|c<br>~~a~~|0.085<br>~~es~~|0.20<br>~~es~~|0.003<br>~~es ee~~|0.008<br>~~ee~~|L<br>~~se~~|0.25<br>~~se~~|0.60|0.0098|0.0236|
|D<br>~~a~~<br>~~ee~~|2.80<br>~~es~~<br>~~ee~~|3.04<br>~~es~~<br>~~ee~~|0.110<br>~~es ee~~<br>~~ee~~|0.120<br>~~ee ~~<br>~~ee~~|L1<br> ~~se~~<br>~~ee~~|0.45<br>~~se~~<br>~~ee~~|0.62<br>~~ee~~|0.018<br>~~ee~~|0.024<br>~~ee~~|
|e<br>~~ee~~|0.95 NOM<br>~~ee~~||0.037 NOM<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|



## **Suggested Pad Layout** 

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**----- Start of picture text -----**<br>
0.95<br>0.037<br>a<br>ball a 2.0<br>0.079<br>0.9<br>0.035<br>mm<br>0.8 inches<br>0.031<br>**----- End of picture text -----**<br>


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ZXTN25040DFH Document number: DS33697 Rev. 2 - 2 

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**A Product Line of Diodes Incorporated ZXTN25040DFH** ~~—~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

|A.   Life support devices or systems are devices or systems which:|A.   Life support devices or systems are devices or systems which:|
|---|---|
||1. are intended to implant into the body, or|
||2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the|
||labeling can be reasonably expected to result in significant injury to the user.|
|B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the|B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the|
|failure of the life support device or to affect its safety or effectiveness.|failure of the life support device or to affect its safety or effectiveness.|



Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated **www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtn25040dfhta/transistor-npn-40v-4a-sot-23/dp/4318556)
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